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Sticking for the basic principle of "Super Top quality, Satisfactory service" ,We've been striving to be an excellent business enterprise partner of you for SiC Graphite Susceptor,Semiconductor Materials,SiC Wafer,Deposition Semiconductor,Epitaxy Wafer, Prospects first! Whatever you require, we should do our utmost to help you. We warmly welcome clients from all around the globe to cooperate with us for mutual enhancement.
SiC Graphite Susceptor, We care about every steps of our services, from factory selection, product development & design, price negotiation, inspection, shipping to aftermarket. Now we have implemented a strict and complete quality control system, which ensures that each product can meet quality requirements of customers. Besides, all of our solutions have been strictly inspected before shipment. Your Success, Our Glory: Our aim is to help customers realize their goals. We're making great efforts to achieve this win-win situation and sincerely welcome you to join us.

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  • MOCVD Susceptor for Epitaxial Growth

    MOCVD Susceptor for Epitaxial Growth

    Semicorex is a leading supplier and manufacturer of MOCVD Susceptor for Epitaxial Growth. Our product is widely used in semiconductor industries, particularly in the growth of the epitaxial layer on the wafer chip. Our susceptor is designed to be used as the center plate in MOCVD, with a gear or ring-shaped design. The product has high heat and corrosion resistance, making it stable in extreme environments.
  • GaN Epitaxy

    GaN Epitaxy

    Semicorex provides custom thin film HEMT (Gallium nitride) GaN epitaxy on Si/SiC/GaN substrates. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Finger

    SiC Finger

    Semicorex SiC Finger stands as a crucial component within semiconductor processing, work as wafer transfer tool. Shaped akin to a finger, this specialized device is meticulously crafted from silicon carbide (SiC), a material renowned for its exceptional mechanical strength, thermal stability, and resistance to harsh chemical environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • PFA Wafer Cassettes

    PFA Wafer Cassettes

    Semicorex PFA Wafer Cassettes are high-purity carriers designed to ensure safe and contamination-free handling of semiconductor wafers during wet processing, storage, and transport. Choosing Semicorex guarantees not only superior PFA material quality but also precision engineering that delivers reliability, cleanliness, and long-term performance in advanced fabrication environments.*
  • SiC Epi Wafers

    SiC Epi Wafers

    Semicorex SiC epi wafers are becoming a key material for promoting technological innovation in high-frequency, high-temperature, and high-power application scenarios due to their excellent physical properties. Semicorex SiC Epi Wafers use industry-leading epitaxial growth technology and are designed to meet the high-end needs of new energy vehicles, 5G communications, renewable energy, and industrial power supplies, providing customers with high-performance, high-reliability core semiconductor solutions.*
  • Diffusion Tube

    Diffusion Tube

    Semicorex cutting-edge Diffusion Tube, crafted from high-quality semiconductor grade quartz—a pinnacle in semiconductor processing technology. Engineered to precision, this indispensable component redefines the standards of diffusion processes in the semiconductor industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

  • Thermal field insulation material

    The process of monocrystalline silicon growth predominantly occurs within a thermal field, where the quality of the thermal environment significantly impacts crystal quality and growth efficiency. The design of the thermal field plays a pivotal role in shaping temperature gradients and gas flow dynamics within the furnace chamber. Furthermore, the materials used in constructing the thermal field directly influence its lifespan and performance.

  • Method for preparing SiC powder

    Silicon carbide (SiC) is an inorganic substance. The amount of naturally occurring silicon carbide is very small. It is a rare mineral and is called moissanite. Silicon carbide used in industrial production is mostly artificially synthesized.

  • The significance of porous graphite materials to SiC crystal growth

    Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

  • SiC Epitaxy

    There are two types of epitaxy: homogeneous and heterogeneous. In order to produce SiC devices with specific resistance and other parameters for different applications, the substrate must meet the conditions of epitaxy before production can begin. The quality of the epitaxy affects the device's performance.

  • Silicon Carbide Heating Elements

    In the world of high-temperature heating, achieving precision and reliability in extreme conditions is paramount. To meet these challenges, innovative materials and designs have been developed to push the boundaries of what's possible. One such advancement is the Silicon Carbide (SiC) coated graphite heating element.

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