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Sticking for the basic principle of "Super Top quality, Satisfactory service" ,We've been striving to be an excellent business enterprise partner of you for SiC Graphite Susceptor,Semiconductor Materials,SiC Wafer,Deposition Semiconductor,Epitaxy Wafer, Prospects first! Whatever you require, we should do our utmost to help you. We warmly welcome clients from all around the globe to cooperate with us for mutual enhancement.
SiC Graphite Susceptor, We care about every steps of our services, from factory selection, product development & design, price negotiation, inspection, shipping to aftermarket. Now we have implemented a strict and complete quality control system, which ensures that each product can meet quality requirements of customers. Besides, all of our solutions have been strictly inspected before shipment. Your Success, Our Glory: Our aim is to help customers realize their goals. We're making great efforts to achieve this win-win situation and sincerely welcome you to join us.

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    Semicorex Solar Graphite Boat, a precision-engineered wafer holder designed to meet the exacting demands of high-temperature semiconductor processing. Crafted from premium-grade graphite, this innovative boat offers unparalleled thermal stability and durability, ensuring optimal performance in even the most demanding furnace environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Quartz Tank for Wet Processing

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    Semicorex Quartz Tank for Wet Processing, also known as quartz bath, is particularly critical in wet processes used for wafer fabrication.**
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    Alumina Tube

    Semicorex Alumina Tube is a pivotal component in a variety of industrial applications, renowned for its ability to withstand harsh environments and high temperatures.**
  • Planetary Susceptor

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    Semicorex Planetary Susceptor is a high-purity graphite component with a SiC coating, designed for Aixtron G5+ reactors to ensure uniform heat distribution, chemical resistance, and high-precision epitaxial layer growth.*
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