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We not only will try our greatest to offer superb companies to just about every buyer, but also are ready to receive any suggestion offered by our shoppers for Sic Powder,si wafer grinding,Silicon Carbide Ceramic,wafer grinding wheel,SiC, We are going to do our best to fulfill your specifications and are sincerely searching forward to building mutual valuable organization romantic relationship along with you!
Sic Powder, Our company regards "reasonable prices, efficient production time and good after-sales service" as our tenet. We hope to cooperate with more customers for mutual development and benefits. We welcome potential buyers to contact us.

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    ICP Plasma Etching Tray

    Semicorex's ICP Plasma Etching Tray is engineered specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers provide even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • Semiconductor Wafer Boat for Vertical Furnaces

    Semiconductor Wafer Boat for Vertical Furnaces

    Semicorex semiconductor wafer boat for vertical furnaces is a specialized tool used in the manufacturing process of semiconductor devices. It is designed to hold and transport silicon wafers during the various stages of wafer processing in a vertical furnace. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Plate for Epitaxial Growth

    Plate for Epitaxial Growth

    The Semicorex Plate for Epitaxial Growth stands as a critical element specifically designed to cater to the intricacies of epitaxial processes. Customizable to meet distinct specifications and preferences, our offering delivers an individually tailored solution that seamlessly fits your unique operational needs. We offer a range of customization options, from size alterations to variations in the coating application, equipping us to engineer and supply a product capable of enhancing performance across various application scenarios. We at Semicorex are dedicated to manufacturing and supplying high-performance Plates for Epitaxial Growth that fuse quality with cost-efficiency.
  • 30mm Aluminum Nitride Wafer Substrate

    30mm Aluminum Nitride Wafer Substrate

    The unique attributes of Semicorex 30mm Aluminum Nitride Wafer Substrate make it an ideal substrate for ultraviolet (UV) LEDs, UV detectors, UV lasers, and the next generation of 5G high-power/high-frequency RF devices. In wireless communications, 30mm Aluminum Nitride Wafer Substrate’s properties facilitate the development of devices capable of handling the high power and frequencies essential for 5G technologies, enhancing signal transmission and reception. Furthermore, in fields like healthcare and military, AlN-based devices are employed in medical phototherapy for treating skin conditions, drug discovery through photodynamic therapies, and secure communication technologies in aerospace, underscoring 30mm Aluminum Nitride Wafer Substrate’s versatility and critical role in technological advancements across diverse sectors.
  • 6'' Wafer Carrier for Aixtron G5

    6'' Wafer Carrier for Aixtron G5

    Semicorex 6'' Wafer Carrier for Aixtron G5 offers a multitude of advantages for use in Aixtron G5 equipment, particularly in high-temperature and high-precision semiconductor manufacturing processes.**
  • Glass-like Carbon Coating

    Glass-like Carbon Coating

    Semicorex Glass-like carbon coating is an advanced protective layer engineered for high-performance applications requiring exceptional hardness, thermal stability, and low particulate emission. Semicorex combines advanced material expertise with cutting-edge coating technology to deliver reliable, high-performance solutions tailored for demanding industrial applications.*
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  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • Dry Etching vs Wet Etching

    In semiconductor fabrication, etching is one of the major steps, along with photolithography and thin-film deposition. It involves removing unwanted materials from the surface of a wafer using chemical or physical methods. This step is carried out after coating, photolithography, and developing. It is used to remove the exposed thin film material, leaving only the desired portion of the wafer, and then removing the excess photoresist. These steps are repeated numerous times to create complex integrated circuits.

  • Substrate vs. Epitaxy: Key Roles in Semiconductor Manufacturing

    ​In the realms of semiconductor technology and microelectronics, the concepts of substrates and epitaxy hold significant importance. They play critical roles in the manufacturing process of semiconductor devices. This article will delve into the differences between semiconductor substrates and epitaxy, covering their definitions, functions, material structures, and application areas.

  • Monocrystalline silicon vs. polycrystalline silicon

    Single crystal silicon and polycrystalline silicon each have their own unique advantages and applicable scenarios. Single crystal silicon is suitable for high-performance electronic products and microelectronics due to its excellent electrical and mechanical properties. Polycrystalline silicon, on the other hand, dominates the field of solar cells due to its low cost and good photoelectric conversion efficiency.

  • SiC Ceramics: The Indispensable Material for High-Precision Components in Semiconductor Manufacturing

    Semiconductor manufacturing, the cornerstone of modern technological advancement, is in constant pursuit of smaller, faster, and more efficient integrated circuits. This relentless pursuit drives the need for increasingly precise and sophisticated manufacturing processes, where each step relies heavily on high-performance, high-quality, and high-precision equipment. Silicon carbide (SiC), a high-performance structural ceramic material, plays a crucial role in this demanding environment.

  • Etching Process Parameters

    Etching is a critical step in chip manufacturing, used to create minute circuit structures on silicon wafers.

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