SiC Epitaxy

Semicorex provides custom thin film (silicon carbide) SiC epitaxy on substrates for the development of silicon carbide devices.

SiC epitaxy can be tailored to meet specific device requirements by incorporating dopants or growing different crystal orientations. Doping the epitaxial layer with impurities such as nitrogen or aluminum allows the modification of electrical properties, such as controlling the carrier concentration or creating p-n junctions.

The quality of the SiC epitaxial layer is assessed through various characterization techniques, including X-ray diffraction, scanning electron microscopy, atomic force microscopy, and electrical measurements. These techniques help evaluate the crystal structure, surface morphology, and electrical performance of the epitaxial layer.

Semicorex can offer: SiC epitaxial wafer, GaN epitaxial wafer, Si Epitaxy, SiC wafer, etc.