Si Epitaxy

Si epitaxy enables the engineering of specific layer properties, such as thickness, doping concentration, and composition. By introducing controlled amounts of impurities, known as dopants, into the epitaxial layer, the electrical characteristics of the resulting devices can be precisely tailored. This enables the creation of different regions with distinct conductivity types (n-type or p-type) and desired carrier concentrations, allowing the integration of complex electronic circuits.

Si epitaxy is a fundamental process in the fabrication of advanced semiconductor devices, including microprocessors, memory chips, image sensors, and solar cells. It plays a vital role in improving device performance, miniaturization, and functionality. The ability to deposit high-quality epitaxial layers with precise control over material properties contributes to the ongoing progress and innovation in the semiconductor industry.