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Epitaxial Base, To achieve reciprocal advantages, our company is widely boosting our tactics of globalization in terms of communication with overseas customers, fast delivery, the best quality and long-term cooperation. Our company upholds the spirit of "innovation, harmony, team work and sharing, trails, pragmatic progress". Give us a chance and we'll prove our capability. With your kind help, we believe that we can create a bright future with you together.

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  • Wafer Holder for ICP Etching Process

    Wafer Holder for ICP Etching Process

    Semicorex's Wafer Holder for ICP Etching Process is the perfect choice for demanding wafer handling and thin film deposition processes. Our product boasts superior heat and corrosion resistance, even thermal uniformity, and optimal laminar gas flow patterns for consistent and reliable results.
  • CVD SiC Coated Graphite Susceptor

    CVD SiC Coated Graphite Susceptor

    Semicorex CVD SiC Coated Graphite Susceptor, is a specialized tool used in the handling and processing of semiconductor wafers. The susceptor plays a crucial role in facilitating the growth of thin films, epitaxial layers, and other coatings on substrates with precise control over temperature and material properties. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coated Susceptor

    TaC Coated Susceptor

    Semicorex TaC Coated Susceptor (Tantalum Carbide Coated Susceptor) is a highly specialized component used in semiconductor manufacturing and other high-temperature applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC ICP Etching Disk

    SiC ICP Etching Disk

    Semicorex SiC ICP Etching Disk is not merely components; it's essential enabler of cutting-edge semiconductor manufacturing as the semiconductor industry continues its relentless pursuit of miniaturization and performance, the demand for advanced materials like SiC will only intensify. It ensures the precision, reliability, and performance required to power our technology-driven world.We at Semicorex are dedicated to manufacturing and supplying high-performance SiC ICP Etching Disk that fuses quality with cost-efficiency.**
  • Tantalum Carbide Crucible

    Tantalum Carbide Crucible

    Semicorex Tantalum Carbide Crucible is a crucial component in the semiconductor industry, specifically designed for the growth of Silicon Carbide (SiC) crystals. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • SiC Disc Susceptor

    SiC Disc Susceptor

    Semicorex introduces its SiC Disc Susceptor, designed to elevate the performance of Epitaxy, Metal-Organic Chemical Vapor Deposition (MOCVD), and Rapid Thermal Processing (RTP) equipment. The meticulously engineered SiC Disc Susceptor provides with properties that guarantee superior performance, durability, and efficiency in high-temperature and vacuum environments.**
  • Related Blog
  • Reviews

  • Why choose liquid phase epitaxy method?

    Compared with the PVT method, the liquid phase method for growing SiC has the following advantages:

  • What is the diffusion furnace?

    A diffusion furnace is a specialized piece of equipment used to introduce impurities into semiconductor wafers in a controlled manner. These impurities, called dopants, change the electrical properties of semiconductors, allowing different types of electronic components to be made. This controlled diffusion process is critical to the production of transistors, diodes and integrated circuits.

  • Knowing MOCVD

    MOCVD is a new vapor phase epitaxial growth technology developed on the basis of vapor phase epitaxial growth (VPE).

  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

  • Exploring the Future Prospects of Silicon Semiconductor Chips

  • What is the Difference Between Graphitization and Carbonization

    In conclusion, both graphitization and carbonization are industrial processes that involve carbon either as a reactant or a product. Carbonization refers to the process of converting organic matter into carbon, while graphitization involves transforming carbon into graphite. Therefore, carbonization is classified as a chemical change, whereas graphitization is recognized as a microstructural change.

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