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    Semicorex Isostatic Graphite Crucibles for Melting are produced using isostatic pressing techniques, which enhance their material density and mechanical properties. This results in a vessel that not only withstands the extreme temperatures and corrosive environments typical of semiconductor processing but also offers long-term durability. The crucibles’ robustness ensures they can handle repeated thermal cycling without degradation, thereby providing consistent performance over extended operational periods. We at Semicorex are dedicated to manufacturing and supplying high-performance Isostatic Graphite Crucibles for Melting that fuse quality with cost-efficiency.
  • Susceptor with Grid

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  • Silicon Substrate

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    Semicorex Silicon substrate, serves as the canvas upon which intricate electronic circuits are crafted. Derived from silicon, one of the most abundant elements in the Earth's crust, this crystalline substrate forms the fundamental material for manufacturing semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • 30mm Aluminum Nitride Wafer Substrate

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  • Analyzing the Applications and Development Prospects of SiC Ceramics in the Semiconductor and Photovoltaic Sectors

    Silicon carbide (SiC), as an important high-end ceramic material, has excellent properties such as high-temperature resistance, corrosion resistance, wear resistance, high-temperature mechanical strength, and oxidation resistance. These properties make it highly promising for applications in high-tech fields such as semiconductors, nuclear energy, defense, and space technology.

  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

  • GaN vs SiC

    There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

  • Semiconductor ceramic parts

    Semiconductor ceramic parts belong to advanced ceramics and are an indispensable part of the semiconductor manufacturing process. The raw materials for preparation are usually high-purity, ultra-fine inorganic materials, such as aluminum oxide, silicon carbide, aluminum nitride, silicon nitride, yttrium oxide, zirconium oxide, etc.

  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

  • Differences between SiC crystals with different structures

    Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

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