SiC Edge Ring
  • SiC Edge RingSiC Edge Ring

SiC Edge Ring

Semicorex CVD SiC Edge Ring is a high-performance plasma-facing component designed to enhance etching uniformity and protect wafer edges in semiconductor manufacturing. Choose Semicorex for unmatched material purity, precision engineering, and proven reliability in advanced plasma process environments.*

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Product Description

Semicorex SiC Edge Ring, manufactured via Chemical Vapor Deposition (CVD) Silicon Carbide (SiC), represents a critical aspect of semiconductor fabrication, specifically playing an important role in the fabrication process in plasma etching chambers. The Edge ring is located around the outer edge of the electrostatic chuck (ESC) during the plasma etching process and has both an aesthetic and functional relationship with the wafer in-process.


In semiconductor integrated circuit (IC) manufacturing, uniform distribution of plasma is critical but wafer edge defects are crucial to maintain high yields during the production of IB and IBF methods, in addition to reliable electrical performances of other ICs. The SiC Edge Ring is important in managing both the reliability of plasma at the wafer edge while stabilizing the wafer boundary plumes in the chamber without equating the two as competing variables.


While this plasma etching process is performed on wafers, the wafers will be exposed to bombardment from high-energy ions, with reactive gases contributing to transfer patterns electively. This conditions create high-energy density processes which can negatively impact uniformity and wafer edge quality if they are not managed correctly. The Edge Ring can be co-exposed with the context of the wafer processing and as the generator of electrified plasma begins exposing the wafers, the Edge Ring will absorb and redistribute the energy at the chamber edge and extend the effective efficiency of the electric field from the generator to the edge of the ESC. This stabilizing approach is used in various ways, including reducing the amount of plasma leakage and distortion near the edge of the wafer boundary which can lead to burnout-failure of the edge.


By promoting a balanced plasma environment, the SiC Edge Ring helps reduce micro-loading effects, prevent over-etching at the wafer periphery, and extend the life of both the wafer and chamber components. This enables higher process repeatability, reduced defectivity, and better across-wafer uniformity—key metrics in high-volume semiconductor manufacturing.


Discontinuities are coupled with each other, making process optimization at the edge of the wafer more challenging. For example, electrical discontinuities may cause distortion of the sheath morphology, causing the angle of the incident ions to change, thus affecting etching uniformity; temperature field non-uniformity may affect the chemical reaction rate, causing the edge etching rate to deviate from that of the central area. In response to the above challenges, improvements are usually made from two aspects: equipment design optimization and process parameter adjustment.


The focus ring is a key component to improve the uniformity of wafer edge etching. It is installed around the edge of the wafer to expand the plasma distribution area and optimize the sheath morphology. In the absence of a focus ring, the height difference between the wafer edge and the electrode causes the sheath to bend, causing the ions to enter the etching area at a non-uniform angle.


The functions of the focus ring include:

•Filling the height difference between the wafer edge and the electrode, making the sheath flatter, ensuring that the ions bombard the wafer surface vertically, and avoiding etching distortion.

•Improve etching uniformity and reduce problems such as excessive edge etching or tilted etching profile.


Material Advantages

The use of CVD SiC as the base material offers several advantages over traditional ceramic or coated materials. CVD SiC is chemically inert, thermally stable, and highly resistant to plasma erosion, even in aggressive fluorine- and chlorine-based chemistries. Its excellent mechanical strength and dimensional stability ensure long service life and low particle generation under high-temperature cycling conditions.


Moreover, the ultra-pure and dense microstructure of CVD SiC reduces the risk of contamination, making it ideal for ultra-clean processing environments where even trace impurities can impact yield. Its compatibility with existing ESC platforms and custom chamber geometries allows for seamless integration with advanced 200mm and 300mm etching tools.


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