English
Home > Products > zirconium oxide ceramic

China zirconium oxide ceramic Manufacturers, Suppliers, Factory

Having a sound business enterprise credit score, outstanding after-sales assistance and modern producing facilities, we have now earned an exceptional name among our shoppers across the planet for zirconium oxide ceramic,zirconia,zirconia ceramic,machining zirconia,black zirconia, And we could help seeking for just about any goods from the customers' needs. Make sure present the best Company, the most effective High-quality, The fast Delivery.
zirconium oxide ceramic, Our product quality is one of the major concerns and has been produced to meet the customer's standards. "Customer services and relationship" is another important area which we understand good communication and relationships with our customers is the most significant power to run it as a long term business.

Related Products

Hot Products

  • Wafer Holder for ICP Etching Process

    Wafer Holder for ICP Etching Process

    Semicorex's Wafer Holder for ICP Etching Process is the perfect choice for demanding wafer handling and thin film deposition processes. Our product boasts superior heat and corrosion resistance, even thermal uniformity, and optimal laminar gas flow patterns for consistent and reliable results.
  • SiC Coated RTP Carrier Plate for Epitaxial Growth

    SiC Coated RTP Carrier Plate for Epitaxial Growth

    Semicorex SiC Coated RTP Carrier Plate for Epitaxial Growth is the perfect solution for semiconductor wafer processing applications. With its high-quality carbon graphite susceptors and quartz crucibles processed by MOCVD on the surface of graphite, ceramics, etc., this product is ideal for wafer handling and epitaxial growth processing. The SiC coated carrier ensures high thermal conductivity and excellent heat distribution properties, making it a reliable choice for RTA, RTP, or harsh chemical cleaning.
  • MOCVD Planet Susceptor for Semiconductor

    MOCVD Planet Susceptor for Semiconductor

    Semicorex is a trusted name in the semiconductor industry, providing high-quality MOCVD Planet Susceptor for Semiconductor. Our product is designed to meet the specific needs of semiconductor manufacturers looking for a carrier that can deliver excellent performance, stability, and durability. Contact us today to learn more about our product and how we can help you with your semiconductor manufacturing needs.
  • Monocrystalline Silicon Epitaxial Susceptor

    Monocrystalline Silicon Epitaxial Susceptor

    Perfect for graphite epitaxy and wafer handling process, Semicorex ultra-pure Monocrystalline Silicon Epitaxial Susceptor ensure minimal contamination and provide exceptionally long life performance. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • TaC Tantalum Carbide Coated Plate

    TaC Tantalum Carbide Coated Plate

    Semicorex TaC Tantalum Carbide Coated Plate is a cutting-edge solution designed to meet the stringent demands of semiconductor manufacturing, particularly in the epitaxial (epi) processing stage. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC-coated Graphite Plates

    SiC-coated Graphite Plates

    Semicorex SiC-coated Graphite Plates are high-purity carriers specifically engineered for the rigorous demands of SiC and GaN epitaxy, utilizing a dense CVD Silicon Carbide coating on an isostatic graphite substrate to provide a stable, chemically inert thermal barrier for high-yield wafer processing. Semicorex supplies qualified products and service for global customers.*
  • Related Blog
  • Reviews

  • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

    Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

  • What is a TaC coating on graphite?

    In the rapidly evolving field of semiconductor manufacturing, even the smallest improvements can make a big difference when it comes to achieving optimal performance, durability, and efficiency. One advancement that is generating a lot of buzz in the industry is the use of TaC (Tantalum Carbide) coating on graphite surfaces. But what exactly is TaC coating, and why are semiconductor manufacturers taking notice of it?

  • Plasma Processes in CVD Operations

    Chemical Vapor Deposition (CVD) refers to a process technology where multiple gaseous reactants at varied partial pressures undergo a chemical reaction under specific temperature and pressure conditions. The resulting solid substance deposits on the surface of the substrate material, thereby obtaining the desired thin film. In traditional integrated circuit manufacturing processes, the obtained thin film materials are generally compounds such as oxides, nitrides, carbides, or materials like polycrystalline silicon, amorphous silicon, etc.

  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

  • The Study on Reaction-Sintered SiC Ceramics and Their Properties

    Silicon carbide (SiC) is a compound formed by covalent bonds between silicon and carbon atoms, known for its excellent wear resistance, thermal shock resistance, corrosion resistance, and high thermal conductivity.

  • What is Low Temperature Plasma Etching?

    Plasma is the fourth state of matter, and it plays a crucial role in both industrial applications and natural phenomena.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept