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  • SiC Coated RTP Carrier Plate for Epitaxial Growth

    SiC Coated RTP Carrier Plate for Epitaxial Growth

    Semicorex SiC Coated RTP Carrier Plate for Epitaxial Growth is the perfect solution for semiconductor wafer processing applications. With its high-quality carbon graphite susceptors and quartz crucibles processed by MOCVD on the surface of graphite, ceramics, etc., this product is ideal for wafer handling and epitaxial growth processing. The SiC coated carrier ensures high thermal conductivity and excellent heat distribution properties, making it a reliable choice for RTA, RTP, or harsh chemical cleaning.
  • Porous Ceramic Vacuum Chuck

    Porous Ceramic Vacuum Chuck

    Semicorex Porous Ceramic Vacuum Chuck's primary function lies in its ability to provide uniform air and water permeability, a feature that ensures the even distribution of stress and robust adhesion of silicon wafers. This characteristic is crucial during the grinding process, as it prevents the wafer from slipping, thereby maintaining the integrity of the operation.**
  • Quartz Sand

    Quartz Sand

    Semicorex is a leading provider of ultra-high purity quartz sand, offering products with ≥99.995% SiO2 content. Our quartz sand stands out for its exceptional purity, ultra-low alkali metal content, and customizable aluminum content.**
  • SiC Bearing

    SiC Bearing

    Semicorex SiC Bearing with its exceptional hardness, strength, and chemical inertness, has emerged as a cornerstone material for engineering demanding applications across diverse industries. When crafted into bearings, SiC unlocks a new level of performance and reliability, particularly in environments characterized by extreme temperatures, corrosive substances, and stringent purity requirements. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Bearing that fuses quality with cost-efficiency.**
  • SiC Coated Epitaxial Reactor Barrel

    SiC Coated Epitaxial Reactor Barrel

    The Semicorex SiC Coated Epitaxial Reactor Barrel is a top-quality graphite product coated with high-purity SiC. Its excellent density and thermal conductivity make it an ideal choice for use in LPE processes, providing exceptional heat distribution and protection in corrosive and high-temperature environments.
  • SiN Substrates

    SiN Substrates

    Semicorex Silicon Nitride SiN substrates are high-performance materials known for their exceptional strength, thermal conductivity, and chemical stability, making them ideal for advanced semiconductor applications. Choosing Semicorex SiN substrates ensures you benefit from cutting-edge technology, rigorous quality control, and a commitment to delivering reliable, industry-leading semiconductor components.*
  • Related Blog
  • Reviews

  • Ceramic Heaters

    In the front-end process (FEOL) of semiconductor manufacturing, the wafer needs to be subjected to various process treatments, especially the wafer needs to be heated to a certain temperature, and there are strict requirements, because the uniformity of temperature has a very important impact on the product yield; at the same time, semiconductor equipment needs to work in the presence of vacuum, plasma and chemical gases, which requires the use of ceramic heaters.

  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • SiC Single Crystal Substrate Processing

    Silicon Carbide (SiC) single crystals are primarily produced using the sublimation method. After removing the crystal from the crucible, several intricate processing steps are required to create usable wafers.

  • About defects in SiC crystals - Micropipe

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

  • Wafer manufacturing

    Wafers are essential raw materials for integrated circuits, power devices, and semiconductor discrete devices. Over 90% of integrated circuits are manufactured using high-purity, high-quality wafers. The quality and supply capacity of these wafers within the industry are directly linked to the overall performance and competitiveness of integrated circuits. In this discussion, we will introduce the wafer manufacturing process in detail.

  • Understanding Chemical Vapor Deposition (CVD): A Comprehensive Overview

    Chemical Vapor Deposition (CVD) is a versatile thin-film deposition technique widely employed in the semiconductor industry for fabricating high-quality, conformal thin films on various substrates. This process involves chemical reactions of gaseous precursors onto a heated substrate surface, resulting in the formation of a solid thin film. This article delves into the intricacies of CVD, exploring its mechanisms, advantages, limitations, and key applications in semiconductor manufacturing.

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