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  • Porous SiC Vacuum Chuck

    Porous SiC Vacuum Chuck

    Semicorex Porous SiC Vacuum Chuck is designed for precise and reliable wafer handling, offering customizable material options to meet a wide range of semiconductor processing needs. Choose Semicorex for its commitment to high-quality, durable solutions that deliver optimal performance and efficiency in every application.*
  • CVD Chemical Vapor Deposition Furnaces

    CVD Chemical Vapor Deposition Furnaces

    Semicorex CVD Chemical Vapor Deposition furnaces make the manufacture of high-quality epitaxy more efficient. We provide custom furnace solutions. Our CVD Chemical Vapor Deposition furnaces have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Coated Graphite Base Susceptors for MOCVD

    SiC Coated Graphite Base Susceptors for MOCVD

    Semicorex SiC Coated Graphite Base Susceptors for MOCVD are superior quality carriers used in the semiconductor industry. Our product is designed with high-quality silicon carbide that provide excellent performance and long-lasting durability. This carrier is ideal for use in the process of growing an epitaxial layer on the wafer chip.
  • SiC Seal Parts

    SiC Seal Parts

    Semicorex SiC seal parts, or Silicon Carbide seal parts, represent a cutting-edge and highly efficient solution for various industrial applications where sealing integrity is paramount. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coating Graphite Cover

    TaC Coating Graphite Cover

    Semicorex TaC Coating Graphite Cover represents a cutting-edge solution in the realm of thermal applications for crystal growth and epitaxial (epi) processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • MOCVD Inlet Rings

    MOCVD Inlet Rings

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite in China. Our MOCVD Inlet Rings have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • Related Blog
  • Reviews

  • TaC coated crucible in SiC crystal growth

    TaC coated crucibles have become an important technical solution as reaction vessels in the growth process of silicon carbide (SiC) crystals.

  • What Is Silicon Carbide (SiC)?

    Semiconductor materials can be divided into three generations according to the time sequence. The first generation of germanium, silicon and other common monomaterials, which is characterised by convenient switching, generally used in integrated circuits. The second generation of gallium arsenide, indium phosphide and other compound semiconductors, mainly used for light-emitting and communication materials.

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • What is the Chemical Vapor Deposition？

    Chemical vapor deposition (CVD) is a coating technology that uses gaseous or vaporous substances to undergo chemical reactions in the gas phase or at a gas-solid interface to generate solid substances that are deposited on the substrate surface, thereby forming high-performance solid films. The core of CVD is to transport gaseous precursors into a reaction chamber, where chemical reactions generate solid products that are deposited on the substrate, and by-product gases are exhausted from the system.

  • What is SiC epitaxy?

    Silicon Carbide (SiC) epitaxy is a key technology in the field of semiconductors, particularly for the development of high-power electronic devices. SiC is a compound semiconductor with a wide bandgap, which makes it ideal for applications that require a high-temperature and high-voltage operation.

  • Application of carbon fiber composite

    Carbon fiber (CF) is a type of fibrous material that contains over 95% carbon.

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