China Semicon Wafer Processing Boat Manufacturers, Suppliers, Factory

Silicon carbide (SiC) plays an important role in manufacturing power electronics and high-frequency devices due to its excellent electrical and thermal properties. The quality and doping level of SiC crystals directly affect the performance of the device, so precise control of doping is one of the key technologies in the SiC growth process.

In the landscape of wide bandgap semiconductor materials, silicon carbide (SiC) has emerged as a highly regarded material, particularly excelling in the high-power conversion domain.

Wafers are sliced from crystal rods, which are produced from polycrystalline and pure undoped intrinsic materials. The process of transforming polycrystalline material into single crystals through melting and recrystallization is known as crystal growth. Currently, two main methods are employed for this process: the Czochralski method and the zone melting method. Among these, the Czochralski method (often referred to as the CZ method) is the most significant for growing single crystals from melts. In fact, over 85% of single crystal silicon is produced using the Czochralski method.

The Silicon Carbide (SiC) production process encompasses the preparation of substrate and epitaxy from the materials side, followed by chip design and manufacturing, device packaging, and finally, distribution to downstream application markets. Among these stages, substrate material processing is the most challenging aspect of the SiC industry. SiC substrates are both hard and brittle, making cutting, grinding, and polishing extremely difficult. This increases the likelihood of defects during processing and reduces the yield rate. Currently, major international SiC manufacturers are planning to transition from 6-inch to 8-inch SiC wafers. Overcoming the challenges associated with 8-inch substrates has become a critical benchmark for the SiC industry. This article will introduce the key parameters of SiC substrates.

In the process of growing SiC and AlN single crystals by the physical vapor transport method (PVT), components such as the crucible, seed crystal holder and guide ring play a vital role. During the preparation process of SiC, the seed crystal is located in a relatively low temperature region, while the raw material is in a high temperature region exceeding 2400°C. The raw materials decompose at high temperatures to form SiXCy (including Si, SiC₂, Si₂C and other components).