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With our rich working experience and thoughtful companies, we have now been recognized as being a trustworthy supplier for a lot of global potential buyers for wafer chucks,vacuum chuck,alumina ceramics,alumina rods,alumina al2o3, We wholeheartedly welcome consumers all over the entire world appear to go to our manufacturing unit and have a win-win cooperation with us!
wafer chucks, In the increasingly competitive market, With sincere service high quality products and well-deserved reputation, we always supply customers support on solutions and techniques to achieve long-term cooperation. Living by quality, development by credit is our eternal pursuit, We firmly believe that after your visit we will become long-term partners.

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  • SiC Parts Abdeck Segmenten

    SiC Parts Abdeck Segmenten

    Semicorex SiC Parts Abdeck Segmenten, a crucial component in semiconductor device manufacturing that redefines precision and durability. Crafted from SiC coated graphite, these small yet essential parts play a pivotal role in advancing semiconductor processing to new levels of efficiency and reliability.
  • Silicon Carbide Boat Holder

    Silicon Carbide Boat Holder

    Semicorex Silicon Carbide Boat Holder is a specialized product crafted from SiC material, meticulously designed for applications in industries such as photovoltaics, electronics, and semiconductors. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • ZrO2 Crucible

    ZrO2 Crucible

    Semicorex ZrO2 Crucible is crafted from stabilized zirconia ceramic, presenting a standard composition of 94.7% zirconium dioxide (ZrO2) and 5.2% yttrium oxide (Y2O3) by weight percentage, or alternatively, 97% ZrO2 and 3% Y2O3 by mol percentage. This precise formulation endows the ZrO2 Crucible with a suite of advantageous characteristics that cater specifically to the demands of high-performance industrial processes.**
  • Porous Graphite Rod

    Porous Graphite Rod

    Semicorex Porous Graphite Rod is a high-purity material featuring a highly open interconnected pore structure and high porosity, specifically designed to enhance the SiC crystal growth process. Choose Semicorex for cutting-edge semiconductor material solutions that prioritize precision, reliability, and innovation.*
  • Bulk SiC Ring

    Bulk SiC Ring

    Semicorex Bulk SiC Ring is a crucial component in semiconductor etching processes, specifically designed for use as an etching ring within advanced semiconductor manufacturing equipment. With our steadfast commitment to providing top-quality products at competitive prices, we are ready to become your long-term partner in China.*
  • SiC Coated Wafer Heater

    SiC Coated Wafer Heater

    Semicorex is a leading independently owned manufacturer of Silicon Carbide Coated Graphite, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our SiC Coated Wafer Heater has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • Defect Detection in Silicon Carbide Wafer Processing

    SiC substrates are the most crucial component in the silicon carbide industry, accounting for nearly 50% of its value. Without SiC substrates, it is impossible to manufacture SiC devices, making them the essential material foundation.

  • What is the advantage of silicon carbide?

  • Chip Manufacturing: Thin Film Processes

    The semiconductor thin film deposition process is an essential component of modern microelectronics technology. It involves constructing complex integrated circuits by depositing one or more thin layers of material on a semiconductor substrate.

  • Surface Polishing of Silicon Wafers

    Silicon wafer surface polishing is a crucial process in semiconductor manufacturing. Its primary goal is to achieve extremely high standards of surface flatness and roughness by removing micro-defects, layers of stress damage, and contamination from impurities such as metal ions.

  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

  • Etching Process Parameters

    Etching is a critical step in chip manufacturing, used to create minute circuit structures on silicon wafers.

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