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Power semiconductors (also known as power electronic devices) are core components for power conversion and circuit control in electronic devices.

Oxidation processes play a critical role in preventing such problems by creating a protective layer on the wafer, known as the oxide layer, which acts as a barrier between different chemicals.

Precision ceramic parts are key components of core equipment in key processes of semiconductor manufacturing, such as photolithography, etching, thin film deposition, ion implantation, CMP, etc., such as bearings, guide rails, liners, electrostatic chucks, mechanical handling arms, etc.

Silicon carbide ceramic membranes have the characteristics of high chemical stability, good thermal shock resistance, strong hydrophilicity, large membrane flux, high mechanical strength, concentrated pore size distribution, and good pore structure gradient.

Currently, many semiconductor devices employ mesa device structures, which are predominantly created through two types of etching: wet etching and dry etching. While the simple and rapid wet etching plays a significant role in semiconductor device fabrication, it has inherent drawbacks such as isotropic etching and poor uniformity, which result in limited control when transferring small-sized patterns. Dry etching, however, with its high anisotropy, good uniformity, and repeatability, has become prominent in semiconductor device fabrication processes. The term “dry etching” broadly refers to any non-wet etching technology used for removing surface materials and transferring micro and nano patterns, including laser etching, plasma etching, and chemical vapor etching. The dry etching discussed in this text specifically pertains to the narrow application of processes using plasma discharge—either physical or chemical—to modify material surfaces.