English
Home > Products > Single Crystal Growing Furnaces

China Single Crystal Growing Furnaces Manufacturers, Suppliers, Factory

Our firm has been concentrating on brand strategy. Customers' pleasure is our best advertising. We also supply OEM company for Single Crystal Growing Furnaces,Carrier SIC Epitaxy,Graphite Susceptors With Silicon Carbide Coating,SiC Graphite Trays,SiC Coating Of Semiconductor, Our company is working through the procedure principle of "integrity-based, cooperation created, people oriented, win-win cooperation". We hope we can have a pleasant relationship with businessman from all around the earth.
Single Crystal Growing Furnaces, In order to meet more market demands and long-term development, a 150, 000-square-meter new factory is under construction, which will be put into use in 2014. Then, we shall own a large capacity of producing. Of course, we are going to continue improving the service system to meet the requirements of customers, bringing health, happiness and beauty to everyone.

Related Products

Hot Products

  • Silicon Carbide-Coated Graphite Barrel

    Silicon Carbide-Coated Graphite Barrel

    The Semicorex Silicon Carbide-Coated Graphite Barrel is the perfect choice for semiconductor manufacturing applications that require high heat and corrosion resistance. Its exceptional thermal conductivity and heat distribution properties make it ideal for use in LPE processes and other high-temperature environments.
  • SiC-Coated ICP Component

    SiC-Coated ICP Component

    Semicorex's SiC-Coated ICP Component is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a fine SiC crystal coating, our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance.
  • Aluminum Nitride Electrostatic Chucks

    Aluminum Nitride Electrostatic Chucks

    Semicorex Aluminum Nitride Electrostatic Chucks offer a compelling combination of properties that make them ideally suited for the demanding requirements of semiconductor wafer processing. Their ability to provide secure and uniform wafer clamping, excellent thermal management, and resistance to harsh processing environments translates into improved device performance, higher yields, and reduced manufacturing costs. We at Semicorex are dedicated to manufacturing and supplying high-performance Aluminum Nitride Electrostatic Chucks that fuse quality with cost-efficiency.**
  • Tantalum Carbide Part

    Tantalum Carbide Part

    Semicorex Tantalum Carbide Part is a TaC-coated graphite component designed for high-performance use in silicon carbide (SiC) crystal growth applications, offering excellent temperature and chemical resistance. Choose Semicorex for reliable, high-quality components that enhance crystal quality and production efficiency in semiconductor manufacturing.*
  • Vertical Silicon Boat

    Vertical Silicon Boat

    Semicorex Vertical Silicon Boat is a critical component used in semiconductor manufacturing processes, Semicorex delivers customized vertical Silicon boat with unparalleled quality and precision, tailored to meet the stringent demands of the semiconductor industry.*
  • TaC Coated Graphite Part

    TaC Coated Graphite Part

    Semicorex TaC Coated Graphite Part is a high-performance component designed for use in SiC crystal growth and epitaxy processes, featuring a durable Tantalum Carbide coating that enhances thermal stability and chemical resistance. Choose Semicorex for our innovative solutions, superior product quality, and expertise in providing reliable, long-lasting components tailored to meet the demanding needs of the semiconductor industry.*
  • Related Blog
  • Reviews

  • Taiwan's PSMC to Build 300mm Wafer Fab in Japan

    Taiwan's Power Semiconductor Manufacturing Corporation (PSMC) has announced plans to build a 300mm wafer fab in Japan in collaboration with SBI Holdings. The purpose of this collaboration is to strengthen Japan's domestic IC (integrated circuit) supply chain, with a particular focus on circuits for AI edge computing and packaging technologies.

  • Epitaxial Layers: The Foundation of Advanced Semiconductor Devices

    In the semiconductor industry, epitaxial layers play a crucial role by forming specific single-crystal thin films atop a wafer substrate, collectively known as epitaxial wafers. Particularly, silicon carbide (SiC) epitaxial layers grown on conductive SiC substrates produce homogenous SiC epitaxial wafers, which are instrumental in the fabrication of power devices such as Schottky diodes, MOSFETs, and IGBTs, with 4H-SiC substrates being the most widely utilized.

  • Main steps in SiC substrate processing

    The processing of 4H-SiC substrate mainly includes the following steps:

  • Substrate and Epitaxy

    In the process of wafer preparation, there are two core links: one is the preparation of the substrate, and the other is the implementation of the epitaxial process. The substrate, a wafer carefully made of semiconductor single crystal material, can be directly put into the wafer manufacturing process as a basis to produce semiconductor devices, or further enhance the performance through the epitaxial process.

  • SiC Coated Susceptors in MOCVD Processes

    CVD SiC coated susceptors function as specialized wafer holders in Metal-Organic Chemical Vapor Deposition (MOCVD) processes, playing a crucial role in semiconductor fabrication. These components are vital for maintaining the structural integrity of wafers during epitaxy under extreme conditions, such as high temperatures and corrosive environments. **

  • What are the technical difficulties of SiC crystal growth furnace

    The crystal growth furnace is the core equipment for the growth of Silicon Carbide crystals. It is similar to the traditional crystalline silicon-grade crystal growth furnace. The furnace structure is not very complicated. It is mainly composed of the furnace body, heating system, coil transmission mechanism, vacuum acquisition and measurement system, gas path system, cooling system, control system, etc. The thermal field and process conditions determine the key indicators such as the quality, size, and conductivity of the SiC crystal.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept