English
Home > Products > Sic Edge Rings For Wafer Etching Process

China Sic Edge Rings For Wafer Etching Process Manufacturers, Suppliers, Factory

We are proud of the superior customer gratification and wide acceptance due to our persistent pursuit of top of the range both of those on merchandise and service for Sic Edge Rings For Wafer Etching Process,Silicon Carbide Edge Ring,Semiconductor Edge Ring,Plasma Edge Ring,Dicing Edge Ring, We're very proud of your fantastic popularity from our prospects for our products' reputable quality.
Sic Edge Rings For Wafer Etching Process, Our items have won an excellent reputation at each of the related nations. Because the establishment of our firm. now we have insisted on our production procedure innovation together with the most recent modern day managing method, attracting a sizable quantity of talents within this industry. We regard the solution good quality as our most vital essence character.

Related Products

Hot Products

  • SiC Wafer Boat

    SiC Wafer Boat

    Semicorex provides wafer boats, pedestals, and custom wafer carriers for both vertical / column and horizontal configurations. We have been manufacturer and supplier of silicon carbide coating film for many years. Our SiC Wafer Boat has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • CVD SiC Focus Ring

    CVD SiC Focus Ring

    Through a process of chemical vapor deposition (CVD), Semicorex CVD SiC Focus Ring is meticulously deposited and mechanically processed to achieve the final product. With its superior material properties, it's indispensable in the demanding environments of modern semiconductor fabrication.**
  • SiC Furnace Tube

    SiC Furnace Tube

    Semicorex SiC Furnace Tube is an indispensable asset for semiconductor manufacturers aiming to enhance their diffusion processes. With its unparalleled material properties, precision design, and ease of use, our SiC Furnace Tube is the ideal solution for improving yield and product quality. Trust Semicorex to provide the cutting-edge solutions you need to excel in the fast-paced semiconductor landscape.*
  • Porous Graphite Barrel

    Porous Graphite Barrel

    Semicorex Porous Graphite Barrel is a high-purity material featuring a highly open interconnected pore structure and high porosity, designed to enhance SiC crystal growth in advanced furnaces. Choose Semicorex for innovative semiconductor material solutions that deliver superior quality, reliability, and precision.*
  • Silicon Carbide Ceramic Structural Parts

    Silicon Carbide Ceramic Structural Parts

    Semicorex Silicon Carbide Ceramic Structural Parts, gained from grains of silicon carbide bonded together by sintering, find extensive usage in the automotive, mechanical, chemical, semiconductor, space technology, microelectronics, and energy sectors, fulfilling critical roles in diverse applications across these industries. Due to their remarkable properties, Silicon Carbide Ceramic Structural Parts have become an ideal material for harsh conditions characterized by high temperatures, high pressures, corrosion, and abrasion, providing reliable performance and longevity in challenging operational environments.**
  • SiC Membranes

    SiC Membranes

    Semicorex SiC membranes are high-performance ceramic filtration solutions designed to meet the most demanding industrial applications with exceptional durability, chemical resistance, and thermal stability. As a leader in advanced material technology, Semicorex continues to push the boundaries of innovation, delivering superior-quality SiC membranes that set new industry standards.*
  • Related Blog
  • Reviews

  • The Crucial Role of Epitaxial Layers in Semiconductor Devices

    Epitaxial growth refers to the process of growing a crystallographically well-ordered monocrystalline layer on a substrate. Generally speaking, epitaxial growth involves the cultivation of a crystal layer on a single-crystal substrate, with the grown layer sharing the same crystallographic orientation as the original substrate. Epitaxy is extensively utilized in semiconductor manufacturing, such as the production of epitaxial silicon wafers in the integrated circuit industry.

  • Introducing Physical Vapor Transport (PVT) 

    SiC's own characteristics determine its single crystal growth is more difficult. Due to the absence of Si:C=1:1 liquid phase at atmospheric pressure, the more mature growth process adopted by the mainstream of the semiconductor industry can not be used to grow the more mature growth method-straight pulling method, the descending crucible method and other methods for growth. After theoretical calculations, only when the pressure is greater than 105 atm and the temperature is higher than 3200 ℃, can we get the stoichiometric ratio of Si:C = 1:1 solution. pvt method is currently one of the more mainstream methods.

  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

  • What is SOI

  • The Study on Reaction-Sintered SiC Ceramics and Their Properties

    Silicon carbide (SiC) is a compound formed by covalent bonds between silicon and carbon atoms, known for its excellent wear resistance, thermal shock resistance, corrosion resistance, and high thermal conductivity.

  • Graphite products for vacuum furnace

    Graphite products are key and indispensable components in the semiconductor manufacturing process, including isostatic graphite, porous graphite, felt, etc.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept