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China SiC Coated Single Wafer Manufacturers, Suppliers, Factory

We'll make each hard work to become excellent and excellent, and speed up our measures for standing from the rank of intercontinental top-grade and high-tech enterprises for SiC Coated Single Wafer,Coated Silicon Carbide Susceptor,SiC Coating Susceptor,Silicon Carbide Coated Deposition Susceptor,SiC Coating Semiconductor, We welcome prospects all around the word to call us for foreseeable future small business interactions. Our products and solutions are the very best. Once Selected, Ideal Forever!
SiC Coated Single Wafer, At Current, our solutions have been exported to more than sixty countries and different regions, such as Southeast Asia, America, Africa, Eastern Europe, Russia, Canada etc. We sincerely hope to establish wide contact with all potential customers both in China and the rest part of the world.

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    Semicorex Graphite Heater is an advanced heating component made from high-purity isostatic graphite, designed for use in monocrystalline silicon (Si) crystal growth applications. As an essential part of semiconductor manufacturing, this product provides precise, uniform heating necessary for high-quality Si crystal production. Through its specialized design and high-performance material, it ensures optimal conditions for crystal growth, significantly enhancing the efficiency and consistency of the process.*
  • Graphite Bipolar Plate

    Graphite Bipolar Plate

    Semicorex Graphite Bipolar Plate is an indispensable component in modern energy systems, offering a blend of superior electrical conductivity, thermal management, and mechanical strength. Its application in PEM fuel cells and flow batteries highlights its critical role in advancing clean energy technologies.
  • Silicon Carbide ICP Etching Carrier

    Silicon Carbide ICP Etching Carrier

    Looking for a reliable wafer carrier for etching processes? Look no further than Semicorex's Silicon Carbide ICP Etching Carrier. Our product is engineered to withstand high temperatures and harsh chemical cleaning, ensuring durability and longevity. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • Silicon Film

    Silicon Film

    Semicorex Silicon Film, or silicon wafer, is a high-purity semiconductor substrate essential for applications in integrated circuits, solar cells, and MEMS devices. Semicorex expertise in precision manufacturing and stringent quality control ensures that our Silicon Film meets the highest industry standards, providing exceptional reliability and performance for advanced semiconductor applications.*
  • CVD SiC Showerhead

    CVD SiC Showerhead

    Semicorex CVD SiC Showerhead is an essential component in modern CVD processes for achieving high-quality, uniform thin films with improved efficiency and throughput. The CVD SiC Showerhead's superior gas flow control, contribution to film quality, and long lifespan make it indispensable for demanding semiconductor manufacturing applications.**
  • ICP Etching Carrier Plate

    ICP Etching Carrier Plate

    Semicorex's ICP Etching Carrier Plate is the perfect solution for demanding wafer handling and thin film deposition processes. Our product provides superior heat and corrosion resistance, even thermal uniformity, and laminar gas flow patterns. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
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  • TaC coating with CVD method

    Tantalum carbide coating is an important high-strength, corrosion-resistant and chemically stable high-temperature structural material with a melting point of up to 4273 °C, one of the several compounds with the highest temperature resistance. It has excellent high-temperature mechanical properties, resistance to high-speed airflow scouring, ablation resistance, and good chemical and mechanical compatibility with graphite and carbon/carbon composites. Therefore, in the epitaxial process of GaN LEDs and SiC power devices such as MOCVD, TaC coating has excellent acid and alkali resistance to H2, HCl, NH3, which can completely protect the graphite substrate material and purify the growth environment.

  • Advantages of Silicon Carbide Ceramics in the Optical Fiber Industry

    Silicon carbide ceramics offer numerous advantages in the optical fiber industry, including high-temperature stability, low thermal expansion coefficient, low loss and damage threshold, mechanical strength, corrosion resistance, good thermal conductivity, and low dielectric constant. These properties make SiC ceramics an ideal material for fiber optic sensors, lasers, and high-power optical fiber applications. As demand in the optical fiber field increases, the application prospects for silicon carbide ceramics will become increasingly prominent.

  • Major ceramic components in semiconductor manufacturing

    Semiconductor equipment consists of chambers and chambers, and most ceramics are used in chambers closer to the wafers. Ceramic parts, important components widely used in the cavities of core equipment, are semiconductor equipment components manufactured through precision processing using advanced ceramic materials such as alumina ceramics, aluminum nitride ceramics, and silicon carbide ceramics.

  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

  • What is P-type SiC wafer?

    A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is a wide-bandgap semiconductor material that offers exceptional electrical and thermal properties, making it suitable for high-power and high-temperature electronic devices.

  • Thermal field insulation material

    The process of monocrystalline silicon growth predominantly occurs within a thermal field, where the quality of the thermal environment significantly impacts crystal quality and growth efficiency. The design of the thermal field plays a pivotal role in shaping temperature gradients and gas flow dynamics within the furnace chamber. Furthermore, the materials used in constructing the thermal field directly influence its lifespan and performance.

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