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China SiC Coated Process Manufacturers, Suppliers, Factory

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  • 4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate

    4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of wafer substrates for many years. Our 4 Inch High Purity Semi-Insulating HPSI SiC Double-side Polished Wafer Substrate has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Silicon Carbide Wafer Grinding Wheel

    Silicon Carbide Wafer Grinding Wheel

    Experience the epitome of precision in semiconductor wafer surface refinement with our cutting-edge Silicon Carbide Wafer Grinding Wheel. This disc-shaped component, meticulously designed for semiconductor equipment, redefines the standards of surface grinding, ensuring optimal results for semiconductor wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Ring Set

    Ring Set

    Unlock the full potential of your semiconductor epitaxial processes with Semicorex Ring Set – a crucial component crafted from SiC-coated graphite. Designed to elevate the efficiency and reliability of your epitaxial growth, this small yet powerful accessory plays a key role in ensuring optimal performance within semiconductor manufacturing environments.
  • Epi-SiC Susceptor

    Epi-SiC Susceptor

    Semicorex Epi-SiC Susceptor, a component engineered with meticulous attention to detail, is indispensable for cutting-edge semiconductor fabrication, especially in epitaxial applications. The Epi-SiC Susceptor’s design, which embodies precision and innovation, supports the epitaxial deposition of semiconductor materials on wafers, ensuring exceptional efficiency and dependability in performance. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • SiC Bearing

    SiC Bearing

    Semicorex SiC Bearing with its exceptional hardness, strength, and chemical inertness, has emerged as a cornerstone material for engineering demanding applications across diverse industries. When crafted into bearings, SiC unlocks a new level of performance and reliability, particularly in environments characterized by extreme temperatures, corrosive substances, and stringent purity requirements. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Bearing that fuses quality with cost-efficiency.**
  • Silicon Nitride Guide Roller

    Silicon Nitride Guide Roller

    Silicon Nitride Guide Roller by Semicorex represents a pinnacle in advanced ceramic engineering. This product offers a remarkable blend of mechanical, thermal, and electrical properties.**
  • Related Blog
  • Reviews

  • What is liquid phase epitaxy?

    The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.

  • LPE Apparatus

    In the realm of semiconductor device fabrication, the precise control of crystal growth is paramount for achieving high-quality and reliable devices. One technique that has played a pivotal role in this domain is Liquid-Phase Epitaxy (LPE).

  • TaC Coating Crucible for AlN Crystal Growth

    The third generation of semiconductor materials AlN belongs to the direct bandgap semiconductor, its bandwidth of 6.2 eV, with high thermal conductivity, resistivity, breakdown field strength, as well as excellent chemical and thermal stability, is not only an important blue light, ultraviolet materials, or electronic devices and integrated circuits, important packaging, dielectric isolation and insulation materials, especially for high-temperature high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

  • The Impact of Temperature on CVD-SiC Coatings

    Chemical Vapor Deposition (CVD) is a versatile technique for producing high-quality coatings with various applications in industries such as aerospace, electronics, and materials science. CVD-SiC coatings are known for their exceptional properties, including high temperature resistance, mechanical strength, and excellent corrosion resistance.

  • The first 6-inch Gallium Oxide substrate industrialization company

    Recently, our company announced that the company has successfully developed a 6-inch Gallium Oxide single crystal using the casting method, becoming the first domestic industrialized company to master the 6-inch Gallium Oxide single crystal substrate preparation technology.

  • GaN and SiC: Coexistence or Substitution?

    The push for higher power density and efficiency has become a primary driver of innovation across multiple industries, including data centers, renewable energy, consumer electronics, electric vehicles, and autonomous driving technologies. In the realm of wide bandgap (WBG) materials, Gallium Nitride (GaN) and Silicon Carbide (SiC) are currently the two core platforms, viewed as pivotal tools leading power semiconductor innovation. These materials are profoundly transforming the power electronics industry to address the ever-increasing demand for power.

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