English
Home > Products > SiC Coated Graphite Trays

China SiC Coated Graphite Trays Manufacturers, Suppliers, Factory

To continually enhance the management technique by virtue of your rule of "sincerely, great faith and high-quality are the base of company development", we widely absorb the essence of similar merchandise internationally, and continuously build new merchandise to meet the demands of customers for SiC Coated Graphite Trays,MOCVD Disc,MOCVD Star,SiC Susceptors Suppliers,Silicon Carbides, We sincerely welcome domestic and international retailers who calls, letters inquiring, or to vegetation to barter, we'll offer you you good quality merchandise along with the most enthusiastic services,We glance ahead towards your go to plus your cooperation.
SiC Coated Graphite Trays, Due to our good goods and services, we've received good reputation and credibility from local and international customers. If you will need more information and are interested in any of our solutions, be sure to feel free to contact us. We look forward to becoming your supplier in the near future.

Related Products

Hot Products

  • SiC Sealing Part

    SiC Sealing Part

    Semicorex SiC Sealing Part offers a blend of exceptional hardness, chemical resistance, and thermal stability, making it significant for demanding industrial applications. The advanced characteristics of SiC Sealing Part ensure durability, reliability, and efficiency, thereby enhancing the performance and longevity of the components.**
  • High-Purity Graphite Isostatic Graphite

    High-Purity Graphite Isostatic Graphite

    Semicorex provide high-purity graphite isostatic graphite with customized service, best choice in the semiconductor processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Wafer Susceptor

    Wafer Susceptor

    Semicorex wafer susceptor is specially designed for the semiconductor epitaxy process. It plays a vital role in ensuring the precision and efficiency of wafer handling. We are a leading enterprise in the Chinese semiconductor industry, committed to providing you with the best products and services.*
  • SiC Coated Barrel Susceptor for LPE Epitaxial Growth

    SiC Coated Barrel Susceptor for LPE Epitaxial Growth

    Semicorex SiC Coated Barrel Susceptor for LPE Epitaxial Growth is a high-performance product designed to provide consistent and reliable performance over an extended period. Its even thermal profile, laminar gas flow pattern, and prevention of contamination make it an ideal choice for the growth of high-quality epitaxial layers on wafer chips. Its customizability and cost-effectiveness make it a highly competitive product in the market.
  • RTP Ring

    RTP Ring

    Semicorex RTP Ring is a SiC-coated graphite ring designed for high-performance applications in Rapid Thermal Processing (RTP) systems. Choose Semicorex for our advanced material technology, ensuring superior durability, precision, and reliability in semiconductor manufacturing.*
  • Silicon Epitaxial Deposition In Barrel Reactor

    Silicon Epitaxial Deposition In Barrel Reactor

    If you need a high-performance graphite susceptor for use in semiconductor manufacturing applications, the Semicorex Silicon Epitaxial Deposition In Barrel Reactor is the ideal choice. Its high-purity SiC coating and exceptional thermal conductivity provide superior protection and heat distribution properties, making it the go-to choice for reliable and consistent performance in even the most challenging environments.
  • Related Blog
  • Reviews

  • How to classify semiconductors

    There are six classifications for semiconductors, which are classified by product standard, processing signal type, manufacturing process, usage function, application field, and design method.

  • The significance of porous graphite materials to SiC crystal growth

    Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

  • Hierarchical Porous Carbon Materials: Synthesis and Introduction

  • About defects in SiC crystals - Micropipe

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

  • Knowing Cantilever Paddle

  • TaC coating with CVD method

    Tantalum carbide coating is an important high-strength, corrosion-resistant and chemically stable high-temperature structural material with a melting point of up to 4273 °C, one of the several compounds with the highest temperature resistance. It has excellent high-temperature mechanical properties, resistance to high-speed airflow scouring, ablation resistance, and good chemical and mechanical compatibility with graphite and carbon/carbon composites. Therefore, in the epitaxial process of GaN LEDs and SiC power devices such as MOCVD, TaC coating has excellent acid and alkali resistance to H2, HCl, NH3, which can completely protect the graphite substrate material and purify the growth environment.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept