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  • Silicon Carbide Coating Graphite Susceptor for MOCVD

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    Semicorex is a trusted supplier and manufacturer of silicon carbide coating graphite susceptor for MOCVD. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
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    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We have been manufacturer and supplier of Deep-UV LED Epitaxial Susceptor for many years. Our products have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Tantalum Carbide Coating Chuck

    Tantalum Carbide Coating Chuck

    Semicorex Tantalum Carbide Coating Chuck is a precision-engineered component designed for use in high-temperature and high-stress environments. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Lid

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    Semicorex SiC Lid is a high-purity silicon carbide component engineered for extreme semiconductor processing environments. Choosing Semicorex means ensuring unmatched material quality, precision engineering, and custom solutions trusted by leading semiconductor manufacturers worldwide.*
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    Semicorex SiC-coated epitaxial susceptors are the essential components used in the semiconductor epitaxial growth process to stably support and fix the semiconductor wafers. Leveraging mature manufacturing capabilities and state-of-the-art production technologies, Semicorex is committed to supplying market-leading quality and competitively priced SiC-coated epitaxial susceptors for our valued customers.
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  • Advantages and Disadvantages of Gallium Nitride (GaN) Applications

    As the world looks for new opportunities in semiconductors, gallium nitride continues to stand out as a potential candidate for future power and RF applications. However, for all the benefits it offers, it still faces a major challenge; there are no P-type (P-type) products. Why is GaN touted as the next major semiconductor material, why is the lack of P-type GaN devices a major drawback, and what does this mean for future designs?

  • Introduction to Third-Generation Semiconductors: GaN and Related Epitaxial Technologies

    GaN materials gained prominence following the awarding of the 2014 Nobel Prize in Physics for blue LEDs. Initially entering the public eye through fast-charging applications in consumer electronics, GaN-based power amplifiers and RF devices have also quietly emerged as critical components in 5G base stations. In recent years, GaN-based automotive-grade power devices have shown promise, potentially opening new growth avenues for GaN material applications.

  • Application of SiC and GaN in electric vehicles

    SiC MOSFETs are transistors that offer high power density, improved efficiency, and low failure rates at high temperatures. These advantages of SiC MOSFETs bring numerous benefits to electric vehicles (EVs), including longer driving range, faster charging, and potentially lower cost battery electric vehicles (BEVs). Over the past five years, SiC MOSFETs have been widely used in the power electronics of EVs in vehicles from OEMs such as Tesla and Hyundai. In fact, SiC inverters accounted for 28% of the BEV market in 2023.

  • Annealing Processes in Modern Semiconductor Manufacturing

    As technology nodes continue to shrink, the formation of ultra-shallow junctions presents significant challenges. Thermal annealing processes including Rapid thermal annealing (RTA) and flash lamp annealing (FLA) are vital techniques that maintain high impurity activation rates while minimizing diffusion, ensuring optimal device performance.

  • Carbon Fiber Modification

    Improving the compatibility between carbon fiber and the matrix: Enhancing the mechanical properties of composite materials and strengthening the mechanical interlocking, physical adhesion, and chemical bonding between the fiber surface and the matrix.

  • Structural differences between different types of reactors

    Based on the reaction chamber configuration, heat treatment equipment (furnace tube equipment) is mainly divided into three categories: vertical furnace tubes, horizontal furnace tubes, and rapid thermal processing (RTP) furnaces.

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