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  • SiC Coated Barrel Susceptor for Epitaxial Growth

    SiC Coated Barrel Susceptor for Epitaxial Growth

    With its superior density and thermal conductivity, the Semicorex SiC Coated Barrel Susceptor for Epitaxial Growth is the ideal choice for use in high-temperature and corrosive environments. Coated with high-purity SiC, this graphite product provides excellent protection and heat distribution, ensuring reliable and consistent performance in semiconductor manufacturing applications.
  • SiC Parts Abdeck Segmenten

    SiC Parts Abdeck Segmenten

    Semicorex SiC Parts Abdeck Segmenten, a crucial component in semiconductor device manufacturing that redefines precision and durability. Crafted from SiC coated graphite, these small yet essential parts play a pivotal role in advancing semiconductor processing to new levels of efficiency and reliability.
  • CVD SiC Coated Barrel Susceptor

    CVD SiC Coated Barrel Susceptor

    Semicorex CVD SiC Coated Barrel Susceptor is a meticulously engineered component tailored for advanced semiconductor manufacturing processes, particularly epitaxy. Our products have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • LPE Halfmoon Reaction Chamber

    LPE Halfmoon Reaction Chamber

    Semicorex LPE Halfmoon Reaction Chamber is indispensable for the efficient and reliable operation of SiC epitaxy, ensuring the production of high-quality epitaxial layers while reducing maintenance costs and increasing operational efficiency. **
  • Planetary Susceptor

    Planetary Susceptor

    Semicorex Planetary Susceptor is a high-purity graphite component with a SiC coating, designed for Aixtron G5+ reactors to ensure uniform heat distribution, chemical resistance, and high-precision epitaxial layer growth.*
  • 8 inch EPI Top Ring

    8 inch EPI Top Ring

    Semicorex 8 inch EPI Top Ring is a SiC coated graphite component designed for use as the upper cover ring in epitaxial growth systems. Choose Semicorex for its industry-leading material purity, precise machining, and consistent coating quality that ensure stable performance and extended component life in high-temperature semiconductor processes.*
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  • Why choose liquid phase epitaxy method?

    Compared with the PVT method, the liquid phase method for growing SiC has the following advantages:

  • SiC Epitaxy

    There are two types of epitaxy: homogeneous and heterogeneous. In order to produce SiC devices with specific resistance and other parameters for different applications, the substrate must meet the conditions of epitaxy before production can begin. The quality of the epitaxy affects the device's performance.

  • Thermal field insulation material

    The process of monocrystalline silicon growth predominantly occurs within a thermal field, where the quality of the thermal environment significantly impacts crystal quality and growth efficiency. The design of the thermal field plays a pivotal role in shaping temperature gradients and gas flow dynamics within the furnace chamber. Furthermore, the materials used in constructing the thermal field directly influence its lifespan and performance.

  • What is Low Temperature Plasma Etching?

    Plasma is the fourth state of matter, and it plays a crucial role in both industrial applications and natural phenomena.

  • Carbon Felt in Induction Heating Furnace - part 2

    The suitability of viscose-based carbon fiber for insulation systems in high-temperature induction heating environments is primarily due to its key properties, including low thermal conductivity, high thermal stability, excellent thermal shock resistance, high purity and low impurity content, and lightweight processability.

  • Detailed Explanation of Semiconductor CVD SiC Process Technology(Part.I)

    Before discussing the Chemical Vapor Deposition (CVD) silicon carbide (Sic) process technology, let's first review some basic knowledge about "chemical vapor deposition." Chemical Vapor Deposition (CVD) is a commonly used technique for preparing various coatings. It involves depositing gaseous reactants onto a substrate surface under appropriate reaction conditions to form a uniform thin film or coating.

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