English
Home > Products > Epitaxial Growth Semiconductor

China Epitaxial Growth Semiconductor Manufacturers, Suppliers, Factory

Our company insists all along the quality policy of "product good quality is base of enterprise survival; buyer fulfillment will be the staring point and ending of an company; persistent improvement is eternal pursuit of staff" and also the consistent purpose of "reputation very first, shopper first" for Epitaxial Growth Semiconductor,Semiconductor Parts,Wafer Epitaxy,GaN Substrate,Aixtron MOCVD, Customers' benefit and satisfaction are always our biggest goal. Please contact us. Give us a chance, give you a surprise.
Epitaxial Growth Semiconductor, With the support of our highly experienced professionals, we manufacture and supply best quality items. These are quality tested at various occasions to ensure only flawless range is delivered to customers, we also customize the array as per the require of customers to meet the requirement of customers.

Related Products

Hot Products

  • SiC/SiC Ceramic Matrix Composites

    SiC/SiC Ceramic Matrix Composites

    SiC/SiC ceramic matrix composites (CMCs) are an innovative solution to improve aerospace applications, specifically turbine engine components and thermal protection systems. By utilizing SiC, the performance and durability of these critical components can be significantly enhanced, resulting in safer and more efficient aerospace technologies. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Baffle Wafer Boat

    Baffle Wafer Boat

    Semicorex Baffle Wafer Boat is a highly advanced piece of equipment used in semiconductor processing. It has been meticulously designed to ensure the delicate wafers are kept safe during the critical stages of production. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Alumina End Effector

    Alumina End Effector

    Semicorex Alumina End Effector has emerged as an indispensable tool in the demanding realm of semiconductor manufacturing, where even microscopic imperfections can compromise device performance, the role of precision wafer handling cannot be overstated. The Alumina End Effector provides a unique combination of precision, purity, and durability essential for manipulating delicate silicon wafers throughout various fabrication processes.**
  • Rigid Composite Felt

    Rigid Composite Felt

    Semicorex Rigid Composite Felt is a premium material crafted from a blend of PAN-based and viscose-based carbon fiber felts. Choose Semicorex for high-performance, durable Rigid Composite Felt that offer superior chemical resistance and thermal stability.*
  • PFA Wafer Cassette

    PFA Wafer Cassette

    Semicorex PFA Wafer Cassette is a high-purity, chemically resistant solution designed to protect semiconductor wafers during processing, storage, and transportation. Choose Semicorex for our precision-engineered, durable products that ensure optimal wafer integrity and efficiency in semiconductor manufacturing.*
  • Ceramic Composite Heaters

    Ceramic Composite Heaters

    Semicorex Ceramic Composite Heaters deliver ultra-clean, high-efficiency heating performance for demanding high-temperature applications. Choose Semicorex for industry-leading material purity, precision engineering, and reliable customization backed by years of expertise in advanced ceramic technologies.*
  • Related Blog
  • Reviews

  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • Tantalum carbide coatings in semiconductor industry

    The development of high-powered blue and UV LEDs has enabled the creation of full-color LED TV displays, as well as white LED automotive and domestic lighting. These LEDs are based on Gallium Nitride, which is deposited on substrate wafers supported by CVD SiC-coated graphite susceptor using the MOCVD process.

  • Released 850V High Power GaN HEMT Epitaxial Products

    In November 2023, Semicorex released 850V GaN-on-Si epitaxial products for high-voltage, high-current HEMT power device applications. Compared to other substrates for HMET power devices, GaN-on-Si enables larger wafer sizes and more diversified applications, and it can also be quickly introduced into the mainstream silicon chip process in fabs, which is a unique advantage for improving the yield of power devices.

  • GaN vs SiC

    There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

  • Substrate Cutting and Grinding Process

    SiC substrate material is the core of SiC chip. The production process of the substrate is: after obtaining the SiC crystal ingot through single crystal growth; then preparing the SiC substrate requires smoothing, rounding, cutting, grinding (thinning); mechanical polishing, chemical mechanical polishing; and cleaning, testing, etc. Process

  • Gallium Nitride Epitaxial Wafers: An Introduction to the Fabrication Process

    Gallium Nitride (GaN) epitaxial wafer growth is a complex process, often utilizing a two-step method. This method involves several critical stages, including high-temperature baking, buffer layer growth, recrystallization, and annealing. By meticulously controlling the temperature throughout these stages, the two-step growth method effectively prevents wafer warping caused by lattice mismatch or stress, making it the predominant fabrication method for GaN epitaxial wafers globally.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept