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    RTP/RTA SiC Coating Carrier

    Semicorex RTP/RTA SiC Coating Carrier is engineered to withstand the toughest conditions of the deposition environment. With its high heat and corrosion resistance, this product is designed to provide optimal performance for epitaxial growth. The SiC coated carrier has a high thermal conductivity and excellent heat distribution properties, ensuring reliable performance for RTA, RTP, or harsh chemical cleaning.
  • High Purity Quartz Crucible

    High Purity Quartz Crucible

    Semicorex High Purity Quartz Crucible meticulously crafted from high-purity quartz, is essential for extracting single-crystal silicon—an indispensable component in modern electronics and renewable energy technologies.**
  • TaC Coating Half-moon Part

    TaC Coating Half-moon Part

    Semicorex TaC Coating Half-moon Part is a high-performance component designed for use in SiC epitaxy processes within LPE epitaxy furnaces. Choose Semicorex for unparalleled quality, precision engineering, and a commitment to advancing semiconductor manufacturing excellence.*
  • SiC Coated Graphite Trays

    SiC Coated Graphite Trays

    Semicorex SiC Coated Graphite Trays are high-performance carrier solutions specifically designed for AlGaN epitaxial growth in the UV LED industry. Choose Semicorex for industry-leading material purity, precision engineering, and unmatched reliability in demanding MOCVD environments.*
  • SiC Tubes

    SiC Tubes

    Semicorex SiC Tubes are silicon carbide furnace tubes designed for semiconductor high-temperature processes, with excellent thermal stability and chemical corrosion resistance. Choosing Semicorex high-purity raw materials, precision manufacturing processes and long-term reliability guarantees to provide solid support for your semiconductor manufacturing process.*
  • CCB Brakes with Coating

    CCB Brakes with Coating

    Semicorex Carbon Ceramic Composite CCB Brakes with Coating represent the cutting edge of high-performance braking technology, combining the exceptional thermal and mechanical properties of carbon–ceramic materials with the advanced protection and durability offered by specialized surface coatings. Choosing Semicorex means selecting reliability, precision, and superior performance under the most demanding conditions—where consistent braking power, long lifespan, and safety are non-negotiable.*
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  • Reviews

  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

  • Substrate and Epitaxy

    In the process of wafer preparation, there are two core links: one is the preparation of the substrate, and the other is the implementation of the epitaxial process. The substrate, a wafer carefully made of semiconductor single crystal material, can be directly put into the wafer manufacturing process as a basis to produce semiconductor devices, or further enhance the performance through the epitaxial process.

  • What Applications of Gallium Nitride (GaN) Substrate?

    Gallium Nitride (GaN) is an important material in semiconductor technology, known for its exceptional electronic and optical properties. GaN, as a wide-bandgap semiconductor, has a bandgap energy of approximately 3.4 eV, making it ideal for high-power and high-frequency applications.

  • Oxidation in Semiconductor Processing

    Oxidation processes play a critical role in preventing such problems by creating a protective layer on the wafer, known as the oxide layer, which acts as a barrier between different chemicals.

  • SiC Single Crystal Substrate Processing

    Silicon Carbide (SiC) single crystals are primarily produced using the sublimation method. After removing the crystal from the crucible, several intricate processing steps are required to create usable wafers.

  • What are the technical difficulties of SiC crystal growth furnace

    The crystal growth furnace is the core equipment for the growth of Silicon Carbide crystals. It is similar to the traditional crystalline silicon-grade crystal growth furnace. The furnace structure is not very complicated. It is mainly composed of the furnace body, heating system, coil transmission mechanism, vacuum acquisition and measurement system, gas path system, cooling system, control system, etc. The thermal field and process conditions determine the key indicators such as the quality, size, and conductivity of the SiC crystal.

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