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China Semiconductor Elements Manufacturers, Suppliers, Factory

With our prosperous working experience and thoughtful solutions, now we have been regarded to be a dependable supplier for lots of intercontinental prospective buyers for Semiconductor Elements,Semiconductor Wafers Robot End Effectors,Robot Arms For Semiconductor Wafer Handling,Ceramics Robot Arm,Silicon Carbide Robot Arm, We sincerely welcome friends to negotiate business and start cooperation. We hope to join hands with friends in different industries to create a brilliant future.
Semiconductor Elements, Now, with the development of internet, and the trend of internationalization, we've got decided to extend business to overseas market. With the propose of bringing more profits to oversea customers by providing directly abroad. So we have changed our mind, from home to abroad, hope to provide our customers more profit, and looking forward to more chance to make business.

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    PSS Etching Carrier Tray for LED

    At Semicorex, we have designed the PSS Etching Carrier Tray for LED specifically for the harsh environments required for epitaxial growth and wafer handling processes. Our ultra-pure graphite carrier is ideal for thin-film deposition phases like MOCVD, epitaxy susceptors, pancake or satellite platforms, and wafer handling processing such as etching. The SiC coated carrier has high heat and corrosion resistance, excellent heat distribution properties, and a high thermal conductivity. Our PSS Etching Carrier Tray for LED is cost-effective and offer a good price advantage. We cater to many European and American markets and look forward to becoming your long-term partner in China.
  • Silicon Etch Plate for PSS Etching Applications

    Silicon Etch Plate for PSS Etching Applications

    Semicorex's Silicon Etch Plate for PSS Etching Applications is a high-quality, ultra-pure graphite carrier that is specifically designed for epitaxial growth and wafer handling processes. Our carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The silicon etch plate for PSS etching applications has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
  • Ring Set

    Ring Set

    Unlock the full potential of your semiconductor epitaxial processes with Semicorex Ring Set – a crucial component crafted from SiC-coated graphite. Designed to elevate the efficiency and reliability of your epitaxial growth, this small yet powerful accessory plays a key role in ensuring optimal performance within semiconductor manufacturing environments.
  • Susceptor Semiconductor

    Susceptor Semiconductor

    Semicorex Susceptor Semiconductor, a revolutionary graphite susceptor meticulously crafted to elevate your semiconductor manufacturing to new heights. Engineered with precision and innovation, this susceptor boasts a CVD SiC coating that sets it apart in the industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • CVD SiC Coated Barrel Susceptor

    CVD SiC Coated Barrel Susceptor

    Semicorex CVD SiC Coated Barrel Susceptor is a meticulously engineered component tailored for advanced semiconductor manufacturing processes, particularly epitaxy. Our products have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • MOCVD 3x2’’ Susceptor

    MOCVD 3x2’’ Susceptor

    Semicorex MOCVD 3x2’’ Susceptor developed by Semicorex represents a pinnacle of innovation and engineering excellence, specifically tailored to meet the intricate demands of contemporary semiconductor manufacturing processes.**
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  • Doping Control in Sublimation SiC Growth

    Silicon carbide (SiC) plays an important role in manufacturing power electronics and high-frequency devices due to its excellent electrical and thermal properties. The quality and doping level of SiC crystals directly affect the performance of the device, so precise control of doping is one of the key technologies in the SiC growth process.

  • Silicon Carbide(SiC) Crystal Growth Furnace

    Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

  • Understanding the Complete Semiconductor Device Fabrication Process

    The fabrication of semiconductor devices primarily encompasses four types of processes: (1) Photolithography (2) Doping Techniques (3) Film Deposition (4) Etching Techniques The specific techniques involved include photolithography, ion implantation, rapid thermal processing (RTP), plasma-enhanced chemical vapor deposition (PECVD), sputtering, and both dry and wet etching methods.

  • Oxidation in Semiconductor Processing

    Oxidation processes play a critical role in preventing such problems by creating a protective layer on the wafer, known as the oxide layer, which acts as a barrier between different chemicals.

  • Semicorex technology for Specialty Graphite

    As a leading upstream graphite material manufacturer in the semiconductor industry, Semicorex prioritizes the availability, usability, and durability of its materials, setting the standard for excellence in the field.

  • Defect Detection in Silicon Carbide Wafer Processing

    SiC substrates are the most crucial component in the silicon carbide industry, accounting for nearly 50% of its value. Without SiC substrates, it is impossible to manufacture SiC devices, making them the essential material foundation.

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