SiC End Effector

SiC End Effector

Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our SiC End Effector has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

Semicorex SiC End Effector is made by Silicon Carbide Coating (SiC) graphite, the coating is applied by a CVD method to specific grades of high density graphite, so it can operate in the high temperature furnace with over 3000 °C in an inert atmosphere, 2200°C in vacuum.

Our SiC End Effector is designed to achieve the best laminar gas flow pattern, ensuring evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip.

Contact us today to learn more about our SiC End Effector.

Parameters of SiC End Effector

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase


g/cm ³



Vickers hardness


Grain Size



Chemical Purity



Heat Capacity

J·kg-1 ·K-1


Sublimation Temperature


Felexural Strength

MPa (RT 4-point)


Young’ s Modulus

Gpa (4pt bend, 1300℃)


Thermal Expansion (C.T.E)



Thermal conductivity



Features of SiC End Effector

- Avoid peeling off and ensure coating on all surface

High temperature oxidation resistance: Stable at high temperatures up to 1600°C

High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.

Corrosion resistance: high hardness, dense surface and fine particles.

Corrosion resistance: acid, alkali, salt and organic reagents.

- Achieve the best laminar gas flow pattern

- Guarantee evenness of thermal profile

- Prevent any contamination or impurities diffusion

Hot Tags: SiC End Effector, China, Manufacturers, Suppliers, Factory, Customized, Bulk, Advanced, Durable

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