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We emphasize advancement and introduce new products and solutions into the market each year for Pump Seals,Silicon Carbide Pump,Ceramic Water Pump Seals,Sic Sealing Rings,Sic Seal, The main purpose of our company is always to live a satisfactory memory to many of the customers, and establish a lengthy time period enterprise romantic relationship with prospective buyers and users all over the environment.
Pump Seals, We mainly sell in wholesale, with the most popular and easy ways of making payment, which are paying via Money Gram, Western Union, Bank Transfer and Paypal. For any further talk, just feel free to contact our salesmen, who are really good and knowledgeable about our prodcuts.

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    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Epitaxy Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • Liquid Phase Epitaxy (LPE) Reactor System

    Liquid Phase Epitaxy (LPE) Reactor System

    Semicorex Liquid Phase Epitaxy (LPE) Reactor System is an innovative product that offers excellent thermal performance, even thermal profile, and superior coating adhesion. Its high purity, high-temperature oxidation resistance, and corrosion resistance make it an ideal choice for use in the semiconductor industry. Its customizable options and cost-effectiveness make it a highly competitive product in the market.
  • Tantalum Carbide Coated Ring

    Tantalum Carbide Coated Ring

    Semicorex Tantalum Carbide Coated Ring is a crucial component used in semiconductor processing. It is designed with a specialized coating that serves multiple functions to enhance the efficiency and longevity of graphite components within semiconductor machinery. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Tantalum Carbide Coating Graphite Crucible

    Tantalum Carbide Coating Graphite Crucible

    Semicorex Tantalum Carbide Coating Graphite Crucible is a specialized component designed for use in the semiconductor industry, particularly in the growth of Silicon Carbide (SiC) crystals. This high-performance crucible stands out due to its unique material composition and structural design, making it an indispensable tool in advanced crystal growth processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • SiC Seal Ring

    SiC Seal Ring

    Semicorex provide high-quality SiC seal ring with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • CCB Brakes

    CCB Brakes

    Semicorex CCB Brakes (Carbon-Ceramic Brakes with Coated Friction Layer) represent the next generation of high-performance braking solutions, engineered for extreme durability, thermal stability, and consistent braking under the most demanding conditions. Choose Semicorex for its expertise in advanced ceramic composites and precision-engineered coating technologies.*
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  • Research Progress of TaC Coatings on Carbon-Based Material Surfaces

    Carbon-based materials such as graphite, carbon fibers, and carbon/carbon (C/C) composites are known for their high specific strength, high specific modulus, and excellent thermal properties, making them suitable for a wide range of high-temperature applications. These materials are widely utilized in aerospace, chemical engineering, and energy storage. However, their susceptibility to oxidation and corrosion in high-temperature environments, along with poor scratch resistance, restricts their further application.

  • Applications of Silicon Carbide

    Among the core components of electric vehicles, automotive power modules—primarily utilizing IGBT technology—play a crucial role. These modules not only determine the key performance of the electric drive system but also account for over 40% of the cost of the motor inverter.

  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • What Applications of Gallium Nitride (GaN) Substrate?

    Gallium Nitride (GaN) is an important material in semiconductor technology, known for its exceptional electronic and optical properties. GaN, as a wide-bandgap semiconductor, has a bandgap energy of approximately 3.4 eV, making it ideal for high-power and high-frequency applications.

  • Applications of TaC Coated Graphite Components

    In the process of growing SiC and AlN single crystals by the physical vapor transport method (PVT), components such as the crucible, seed crystal holder and guide ring play a vital role. During the preparation process of SiC, the seed crystal is located in a relatively low temperature region, while the raw material is in a high temperature region exceeding 2400°C. The raw materials decompose at high temperatures to form SiXCy (including Si, SiC₂, Si₂C and other components).

  • Methods of AlN Crystal Growth

    AlN, as third-generation semiconductor material, is not only an important blue light and ultraviolet light material, but also an important packaging, dielectric isolation and insulation material for electronic devices and integrated circuits, especially suitable for high-temperature and high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

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