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    SiC Susceptor for MOCVD

    Semicorex is a leading manufacturer and supplier of SiC Susceptor for MOCVD. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
  • MOCVD Inlet Seal Ring

    MOCVD Inlet Seal Ring

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite in China. Our MOCVD Inlet Seal Ring has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • ICP Etching Plate

    ICP Etching Plate

    Semicorex ICP Etching Plate is an advanced, high-performance component specifically designed for semiconductor applications, crafted from Silicon Carbide (SiC) material. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • SiC O Ring

    SiC O Ring

    Semicorex SiC O Ring is highly valued in a range of industries for their exceptional sealing capabilities and material properties. Its use spans applications where extreme conditions such as high temperatures, aggressive chemicals, mechanical stress, and stringent cleanliness are routine.**
  • Graphite Ring

    Graphite Ring

    Semicorex Graphite Ring's ability to withstand extreme conditions and ease of installation make them an indispensable component in industries such as hydraulics, pneumatics, and heat exchangers.
  • Impregnated Graphite

    Impregnated Graphite

    Semicorex Impregnated Graphite is a high-performance composite material created through high-pressure resin impregnated, offering exceptional strength, wear resistance, and corrosion protection for sealing and lubrication applications. Choose Semicorex for advanced impregnation technology, ultra-precise machining, and consistent material quality.*
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  • Reviews

  • Dislocation in SiC crystals

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

  • What is isostatic graphite?

    Isostatic graphite is a type of graphite with an ultra-fine grain. It is used for applications where the mechanical properties of other fine-grained graphites are inadequate.

  • Methods of AlN Crystal Growth

    AlN, as third-generation semiconductor material, is not only an important blue light and ultraviolet light material, but also an important packaging, dielectric isolation and insulation material for electronic devices and integrated circuits, especially suitable for high-temperature and high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

  • Differences between SiC crystals with different structures

    Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

  • Difficulty in preparing SiC substrates

    At present, the most important direction trend of substrate development is to expand the diameter. The 6-inch mass production line in the global SiC market is maturing, and leading companies have entered the 8-inch market.

  • What Applications of Gallium Nitride (GaN) Substrate?

    Gallium Nitride (GaN) is an important material in semiconductor technology, known for its exceptional electronic and optical properties. GaN, as a wide-bandgap semiconductor, has a bandgap energy of approximately 3.4 eV, making it ideal for high-power and high-frequency applications.

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