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  • Inductively-Coupled Plasma (ICP)

    Inductively-Coupled Plasma (ICP)

    Semicorex's silicon carbide coated susceptor for Inductively-Coupled Plasma (ICP) is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers ensure even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • AlN Single Crystal Wafer

    AlN Single Crystal Wafer

    Semicorex AlN single crystal wafer is a cutting-edge semiconductor substrate designed for high-power, high-frequency, and deep ultraviolet (UV) applications. Choosing Semicorex ensures access to industry-leading crystal growth technology, high-purity materials, and precise wafer fabrication, guaranteeing superior performance and reliability for demanding applications.*
  • Susceptors for MOCVD Reactors

    Susceptors for MOCVD Reactors

    Semicorex's Susceptors for MOCVD Reactors are high-quality products used in the semiconductor industry for various applications such as silicon carbide layers and epitaxy semiconductor. Our product is available in gear or ring shape and is designed to achieve high-temperature oxidation resistance, making it stable at temperatures up to 1600°C.
  • Tantalum Carbide Coated Susceptor

    Tantalum Carbide Coated Susceptor

    Semicorex Tantalum Carbide Coated Susceptor is a critical component, playing a pivotal role in deposition processes essential for creating semiconductor wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Tantalum Carbide Coated Graphite Parts

    Tantalum Carbide Coated Graphite Parts

    Semicorex provide high-quality Tantalum Carbide Coated Graphite Parts with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Fingers

    SiC Fingers

    Semicorex SiC Fingers are precision-engineered components made from high-purity silicon carbide, designed to perform under the extreme demands of semiconductor manufacturing. Choosing Semicorex means access to advanced material expertise, high-precision processing, and reliable solutions trusted in critical wafer handling applications.*
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  • What is liquid phase epitaxy?

    The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.

  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • How Are Ceramic Electrostatic Chucks Actually Produced?

    In semiconductor manufacturing, the precision and stability of the etching process are paramount. One critical factor in achieving high-quality etching is ensuring that wafers are perfectly flat on the tray during the process. Any deviation can lead to uneven ion bombardment, causing undesirable angles and variations in etching rates. To address these challenges, engineers have developed Electrostatic Chucks (ESCs), which have significantly improved etching quality and stability. This article delves into the design and functionality of ESCs, focusing on one key aspect: the electrostatic principles behind wafer adhesion.

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    In semiconductor manufacturing, the precision and stability of the etching process are paramount. One critical factor in achieving high-quality etching is ensuring that wafers are perfectly flat on the tray during the process.

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