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ICP Etch System, We warmly welcome your patronage and will serve our clients both at home and abroad with items of superior quality and excellent service geared to the trend of further development as always. We believe you will benefit from our professionalism soon.

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    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

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