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Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

Semiconductor materials can be divided into three generations according to the time sequence. The first generation of germanium, silicon and other common monomaterials, which is characterised by convenient switching, generally used in integrated circuits. The second generation of gallium arsenide, indium phosphide and other compound semiconductors, mainly used for light-emitting and communication materials.

Silicon carbide (SiC) is a material that possesses high bond energy, similar to other hard materials like diamond and cubic boron nitride. However, the high bond energy of SiC makes it difficult to crystallize directly into ingots via traditional melting methods. Therefore, the process of growing silicon carbide crystals involves the use of vapor phase epitaxy technology.

Oxidation processes play a critical role in preventing such problems by creating a protective layer on the wafer, known as the oxide layer, which acts as a barrier between different chemicals.

With the development of semiconductor and optical technologies, glass wafers as the new type of glass product, are gradually becoming a complement to silicon wafers, showing great potential in the field of high technology. What are the glass wafers? Glass wafers are the high-performing circular thin slices, commonly made of quartz glass, alkali-free glass, or glass-silicon composites. With excellent physical and chemical properties, they play an irreplaceable roles in cutting-edge manufacturing fields, such as semiconductor manufacturing, optics, MEMS, consumer electronics, biomedicine, and laboratory research.