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The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

In semiconductor manufacturing, atomic-level flatness is usually used to describe the global flatness of the wafer, with the unit of nanometers (nm).

When cleaning wafers, ultrasonic cleaning and megasonic cleaning are commonly used to remove particles from the wafer surface.

Plasma is the fourth state of matter, and it plays a crucial role in both industrial applications and natural phenomena.

In high-performance automotive engineering, shifting from traditional cast iron to carbon ceramic brakes marks a significant advancement. Semicorex GT Version of carbon ceramic brakes employs advanced materials to push the limits of stopping power and handling.

Improving the compatibility between carbon fiber and the matrix: Enhancing the mechanical properties of composite materials and strengthening the mechanical interlocking, physical adhesion, and chemical bonding between the fiber surface and the matrix.