Gas Distribution Plates

Semicorex Gas Distribution Plates play a critical role in advanced plasma etching systems, particularly in semiconductor manufacturing where precision, uniformity, and contamination control are paramount. Our Gas Distribution Plate, engineered from high-purity Chemical Vapor Deposition Silicon Carbide (CVD SiC), is designed to meet the stringent demands of modern dry etching processes.

During the etching process, reactive gases must be introduced into the chamber in a controlled and uniform manner to ensure consistent plasma distribution across the wafer surface. The Gas Distribution Plates are strategically located above the wafer and serves a dual function: it first pre-disperses the process gases and then directs them through a series of finely tuned channels and apertures towards the electrode system. This precise gas delivery is essential to achieving uniform plasma characteristics and consistent etch rates across the entire wafer.

Etching uniformity can be further improved by optimizing the injection method of reactive gas:

• Aluminum etching chamber: Reactive gas is usually delivered through a showerhead located above the wafer.

• Silicon etching chamber: Initially, the gas was injected from the periphery of the wafer, and then gradually evolved to be injected from above the center of the wafer to improve etching uniformity.

Gas Distribution Plates, also known as showerheads, are a gas distribution device widely used in semiconductor manufacturing processes. It is mainly used to evenly distribute gas into the reaction chamber to ensure that semiconductor materials can be evenly contacted with gas during the reaction process, improving production efficiency and product quality. The product has the characteristics of high precision, high cleanliness, and multiple-composite surface treatment (such as sandblasting/anodizing/brush nickel plating/electrolytic polishing, etc.). Gas Distribution Plates are located in the reaction chamber and provide a uniformly deposited gas film layer for the wafer reaction environment. It is a core component of wafer production.

During the wafer reaction process, the surface of Gas Distribution Plates is densely covered with micropores (aperture 0.2-6 mm). Through the precisely designed pore structure and gas path, the special process gas needs to pass through thousands of small holes on the uniform gas plate and then be evenly deposited on the wafer surface. The film layers in different areas of the wafer need to ensure high uniformity and consistency. Therefore, in addition to extremely high requirements for cleanliness and corrosion resistance, Gas Distribution Plates have strict requirements on the consistency of the aperture of the small holes on the uniform gas plate and the burrs on the inner wall of the small holes. If the aperture size tolerance and consistency standard deviation are too large or there are burrs on any inner wall, the thickness of the deposited film layer will be inconsistent, which will directly affect the equipment process yield. In plasma-assisted processes (such as PECVD and dry etching), the shower head, as part of the electrode, generates a uniform electric field through an RF power supply to promote uniform distribution of plasma, thereby improving the uniformity of etching or deposition.

Our CVD SiC Gas Distribution Plates are suitable for a wide range of plasma etching platforms used in semiconductor fabrication, MEMS processing, and advanced packaging. Custom designs can be developed to meet specific tool requirements, including dimensions, hole patterns, and surface finishes.

Semicorex Gas Distribution Plates made of CVD SiC is a vital component in modern plasma etching systems, offering exceptional gas delivery performance, outstanding material durability, and minimal contamination risk. Its use directly contributes to higher process yields, lower defectivity, and longer tool uptime, making it a trusted choice for leading-edge semiconductor manufacturing.