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epitaxial wafer, We strive for excellence, constant improvement and innovation, is committed to make us the "customer trust" and the "first choice of engineering machinery accessories brand" suppliers. Choose us, sharing a win-win situation!

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  • Silicon Carbide SiC Coated Barrel Susceptor

    Silicon Carbide SiC Coated Barrel Susceptor

    Semicorex is a leading independently owned manufacturer of Silicon Carbide SiC Coated Barrel Susceptor, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our Silicon Carbide SiC Coated Barrel Susceptor have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • CVD Epitaxial Deposition In Barrel Reactor

    CVD Epitaxial Deposition In Barrel Reactor

    Semicorex CVD Epitaxial Deposition In Barrel Reactor is a highly durable and reliable product for growing epixial layers on wafer chips. Its high-temperature oxidation resistance and high purity make it suitable for use in the semiconductor industry. Its even thermal profile, laminar gas flow pattern, and prevention of contamination make it an ideal choice for high-quality epixial layer growth.
  • SiC Ceramic Cantilever Paddle

    SiC Ceramic Cantilever Paddle

    Large wafer loading force silicon carbide SiC ceramic cantilever paddle is suitable for a robot automatic loading and handling system because it has stable performance, non-deformation in high temperature and large wafer loading force. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SOI Wafer

    SOI Wafer

    Semicorex SOI Wafer is a high-performance semiconductor substrate that features a thin silicon layer atop an insulating material, optimizing device efficiency, speed, and power consumption. With customizable options, advanced manufacturing techniques, and a focus on quality, Semicorex provides SOI wafers that ensure superior performance and reliability for a wide range of cutting-edge applications.*
  • Quartz Wafer Boat Bracket

    Quartz Wafer Boat Bracket

    Semicorex Quartz Wafer Boat Bracket is an indispensable component in the production of semiconductor wafers and photovoltaic cells, offering exceptional material properties and design features, ensuring wafer stability, and improve process outcomes.
  • CVD Coating Wafer Holder

    CVD Coating Wafer Holder

    Semicorex CVD Coating Wafer Holder is a high-performance component with a tantalum carbide coating, designed for precision and durability in semiconductor epitaxy processes. Choose Semicorex for reliable, advanced solutions that enhance your production efficiency and ensure superior quality in every application.*
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    Japan recently restricted exports of 23 types of semiconductor manufacturing equipment. The announcement has sent ripples across the industry, as the move is expected to have a significant impact on global supply chains for semiconductor manufacturing.

  • Method of GaN Crystal Growth

    When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

  • Specialized Preparation Techniques for Silicon Carbide Ceramics

    Silicon carbide (SiC) ceramic materials possess a range of excellent properties, including high-temperature strength, strong oxidation resistance, superior wear resistance, thermal stability, low thermal expansion coefficient, high thermal conductivity, high hardness, thermal shock resistance, and chemical corrosion resistance. These characteristics make SiC ceramics increasingly applicable in various fields such as automotive, mechanical and chemical industries, environmental protection, space technology, information electronics, and energy. SiC ceramics have become an irreplaceable structural ceramic material in many industrial sectors due to their outstanding performance.

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    4H-SiC, as a third-generation semiconductor material, is renowned for its wide bandgap, high thermal conductivity, and excellent chemical and thermal stability, making it highly valuable in high-power and high-frequency applications.

  • Homoepitaxy and Heteroepitaxy Explained Simply

    Homoepitaxy and heteroepitaxy play pivotal roles in material science. Homoepitaxy involves the growth of a crystalline layer on a substrate of the same material, ensuring minimal defects due to perfect lattice matching. In contrast, heteroepitaxy grows a crystalline layer on a different material substrate, which can lead to challenges like lattice mismatch. These processes are crucial in advancing semiconductor devices and thin films. For instance, heteroepitaxy significantly impacts microelectronics and quantum optics, contributing to innovations like Light Emitting Diodes.

  • SK Siltron Expands Its SiC Wafer Production with a $544 Million Loan from the U.S. Department of Energy

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