English
Home > Products > Epitaxial Vertical Susceptor

China Epitaxial Vertical Susceptor Manufacturers, Suppliers, Factory

No matter new customer or old customer, We believe in long term and trusted relationship for Epitaxial Vertical Susceptor,Carrier SIC Epitaxy,Graphite Susceptors With Silicon Carbide Coating,SiC Graphite Trays,SiC Coating Of Semiconductor, Prospects first! Whatever you require, we should do our utmost to help you. We warmly welcome clients from all around the globe to cooperate with us for mutual enhancement.
Epitaxial Vertical Susceptor, If any item be of curiosity to you, make sure you allow us to know. We will try our best to satisfy your requirements with high quality products and solutions, the best prices and prompt delivery. Be sure to feel free to contact us at any time. We'll reply you when we receive your inquiries. You should note that samples are available before we start our business.

Related Products

Hot Products

  • Carbon Ceramic Brake Pads

    Carbon Ceramic Brake Pads

    Semicorex Carbon ceramic brake pads provide exceptional strength, heat resistance, and reliable braking performance in all conditions, making them the ideal choice for high-performance vehicles, motorsports, aviation, and motorcycles. *
  • Tantalum Carbide Guide Ring

    Tantalum Carbide Guide Ring

    Semicorex Tantalum Carbide Guide Ring is a graphite ring coated with tantalum carbide, used in silicon carbide crystal growth furnaces for seed crystal support, temperature optimization, and enhanced growth stability. Choose Semicorex for its advanced materials and design, which significantly improve the efficiency and quality of crystal growth.*
  • SiC Coated Graphite Base Susceptors for MOCVD

    SiC Coated Graphite Base Susceptors for MOCVD

    Semicorex SiC Coated Graphite Base Susceptors for MOCVD are superior quality carriers used in the semiconductor industry. Our product is designed with high-quality silicon carbide that provide excellent performance and long-lasting durability. This carrier is ideal for use in the process of growing an epitaxial layer on the wafer chip.
  • Modified C/SiC Composites

    Modified C/SiC Composites

    Semicorex provide several types of modified C/SiC Composites(Ceramic Matrix Composites, CMCs), Zirconium and Hafnium, Silicon. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coating Wafer Chuck

    TaC Coating Wafer Chuck

    Semicorex TaC Coating Wafer Chuck stands as the pinnacle of innovation in the semiconductor epitaxy process, a critical phase in semiconductor manufacturing. With our commitment to delivering top-quality products at competitive prices, we are poised to be your long-term partner in China.*
  • RTP RTA SiC Coated Carrier

    RTP RTA SiC Coated Carrier

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. Semicorex graphite susceptor engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our RTP RTA SiC Coated Carrier has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • Related Blog
  • Reviews

  • Intrinsic Silicon

    Intrinsic silicon refers to pure silicon that is free from impurities.

  • What is P-type SiC wafer?

    A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is a wide-bandgap semiconductor material that offers exceptional electrical and thermal properties, making it suitable for high-power and high-temperature electronic devices.

  • What is the Difference Between Graphitization and Carbonization

    In conclusion, both graphitization and carbonization are industrial processes that involve carbon either as a reactant or a product. Carbonization refers to the process of converting organic matter into carbon, while graphitization involves transforming carbon into graphite. Therefore, carbonization is classified as a chemical change, whereas graphitization is recognized as a microstructural change.

  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

  • SiC Single Crystal Substrate Processing

    Silicon Carbide (SiC) single crystals are primarily produced using the sublimation method. After removing the crystal from the crucible, several intricate processing steps are required to create usable wafers.

  • Photovoltaic Industry Development Overview

    By 2027, solar photovoltaic (PV) will overtake coal as the world's largest installed capacity. The cumulative installed capacity of solar PV nearly triples in our forecast, growing by nearly 1,500 gigawatts over this period, and will surpass natural gas by 2026 and coal by 2027.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept