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    Semicorex Silicon substrate, serves as the canvas upon which intricate electronic circuits are crafted. Derived from silicon, one of the most abundant elements in the Earth's crust, this crystalline substrate forms the fundamental material for manufacturing semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Silicon Carbide Ceramic Structural Parts

    Silicon Carbide Ceramic Structural Parts

    Semicorex Silicon Carbide Ceramic Structural Parts, gained from grains of silicon carbide bonded together by sintering, find extensive usage in the automotive, mechanical, chemical, semiconductor, space technology, microelectronics, and energy sectors, fulfilling critical roles in diverse applications across these industries. Due to their remarkable properties, Silicon Carbide Ceramic Structural Parts have become an ideal material for harsh conditions characterized by high temperatures, high pressures, corrosion, and abrasion, providing reliable performance and longevity in challenging operational environments.**
  • SiC Pump Shaft

    SiC Pump Shaft

    Semicorex SiC Pump Shaft stands out for its unparalleled performance and reliability as an integral component in magnetic pumps, shield pumps, multistage pumps, hydraulic pumps, chemical pumps, and centrifuges.
  • GaN Epitaxy Carrier

    GaN Epitaxy Carrier

    The Semicorex GaN Epitaxy Carrier is pivotal in semiconductor manufacturing, integrating advanced materials and precision engineering. Distinguished by its CVD SiC coating, this carrier offers exceptional durability, thermal efficiency, and protective capabilities, establishing itself as a standout in the industry. We at Semicorex are dedicated to manufacturing and supplying high-performance GaN Epitaxy Carrier that fuse quality with cost-efficiency.
  • Ga2O3 Substrate

    Ga2O3 Substrate

    Unlock the potential of cutting-edge semiconductor applications with our Ga2O3 Substrate, a revolutionary material at the forefront of semiconductor innovation. Ga2O3, a fourth-generation wide-bandgap semiconductor, exhibits unparalleled characteristics that redefine power device performance and reliability.
  • SiC ALD Susceptor

    SiC ALD Susceptor

    Semicorex SiC ALD Susceptor offers numerous advantages in ALD processes, including high-temperature stability, enhanced film uniformity and quality, improved process efficiency, and extended susceptor lifetime. These benefits make the SiC ALD Susceptor a valuable tool for achieving high-performance thin films in various demanding applications.**
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  • Final polishing of the silicon wafer surface

    To achieve the high-quality requirements of IC chip circuit processes with line widths smaller than 0.13μm to 28nm for 300mm diameter silicon polishing wafers, it is essential to minimize contamination from impurities, such as metal ions, on the wafer's surface.

  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

  • The Study on the Distribution of Electrical Resistivity in n-Type 4H-SiC Crystals

    4H-SiC, as a third-generation semiconductor material, is renowned for its wide bandgap, high thermal conductivity, and excellent chemical and thermal stability, making it highly valuable in high-power and high-frequency applications.

  • About defects in SiC crystals - Micropipe

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

  • What Applications of Gallium Nitride (GaN) Substrate?

    Gallium Nitride (GaN) is an important material in semiconductor technology, known for its exceptional electronic and optical properties. GaN, as a wide-bandgap semiconductor, has a bandgap energy of approximately 3.4 eV, making it ideal for high-power and high-frequency applications.

  • Surface Polishing of Silicon Wafers

    Silicon wafer surface polishing is a crucial process in semiconductor manufacturing. Its primary goal is to achieve extremely high standards of surface flatness and roughness by removing micro-defects, layers of stress damage, and contamination from impurities such as metal ions.

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