English
Home > Products > graphite carbon felt

China graphite carbon felt Manufacturers, Suppliers, Factory

Our well-equipped facilities and exceptional top quality handle throughout all stages of production enables us to guarantee total client fulfillment for graphite carbon felt,Thermal insulator,carbon fiber felt,carbon felt,Glass-like Carbon, We warmly welcome customers, business associations and friends from all over the world to contact us and seek cooperation for mutual benefits.
graphite carbon felt, We hope we can establish long-term cooperation with all of the customers, and hope we can improve competitiveness and achieve the win-win situation together with the customers. We sincerely welcome the customers from all over the world to contact us for anything you need to have!Welcome all customers both at home and abroad to visit our factory. We hope to have win-win business relationships with you, and create a better tomorrow.

Related Products

Hot Products

  • TaC Coated Graphite Susceptor

    TaC Coated Graphite Susceptor

    Semicorex cutting-edge TaC Coated Graphite Susceptor, a revolutionary component designed to elevate your wafer epitaxial process to new heights of efficiency and precision. Crafted with unparalleled expertise and utilizing state-of-the-art technology, Semicorex TaC Coated Graphite Susceptor is engineered to meet the exacting demands of semiconductor manufacturing.
  • Alumina Plate Flange

    Alumina Plate Flange

    Semicorex Alumina Plate Flange represents a pinnacle of versatility and performance in ceramic engineering. Crafted from alumina ceramics, a material renowned for its exceptional properties, this flange embodies a perfect amalgamation of robustness, high temperature resistance, and electrical conductivity. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC-coated Seal Ring

    TaC-coated Seal Ring

    Semicorex TaC-coated Seal Ring applied to sealing components provides exceptional performance advantages in the demanding environments of semiconductor fabrication. TaC coating addresses critical challenges related to chemical resistance, extreme temperatures, and mechanical wear, enabling higher process yields, increased equipment uptime, and ultimately, lower manufacturing costs. We at Semicorex are dedicated to manufacturing and supplying high-performance TaC-coated Seal Ring that fuses quality with cost-efficiency.**
  • Tantalum Carbide Coating Graphite Crucible

    Tantalum Carbide Coating Graphite Crucible

    Semicorex Tantalum Carbide Coating Graphite Crucible is a specialized component designed for use in the semiconductor industry, particularly in the growth of Silicon Carbide (SiC) crystals. This high-performance crucible stands out due to its unique material composition and structural design, making it an indispensable tool in advanced crystal growth processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • 6 inch SiC Boat

    6 inch SiC Boat

    Semicorex 6 Inch SiC Boat is a high-performance wafer carrier made from silicon carbide, designed for use in high-temperature semiconductor processes such as oxidation and diffusion. Semicorex provides superior-quality products with exceptional thermal stability, excellent chemical resistance, and a commitment to reliable, long-lasting performance in demanding semiconductor applications.*
  • 8 inch EPI Top Ring

    8 inch EPI Top Ring

    Semicorex 8 inch EPI Top Ring is a SiC coated graphite component designed for use as the upper cover ring in epitaxial growth systems. Choose Semicorex for its industry-leading material purity, precise machining, and consistent coating quality that ensure stable performance and extended component life in high-temperature semiconductor processes.*
  • Related Blog
  • Reviews

  • Dislocation in SiC crystals

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level.

  • SiC Epitaxy

    There are two types of epitaxy: homogeneous and heterogeneous. In order to produce SiC devices with specific resistance and other parameters for different applications, the substrate must meet the conditions of epitaxy before production can begin. The quality of the epitaxy affects the device's performance.

  • Silicon Carbide Wafer Epitaxy Technology

    Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

  • Ion Implant and Diffusion Process

    Ion implantation is a method of semiconductor doping and one of the main processes in semiconductor manufacturing.

  • Understanding the Etching Differences Between Silicon and Silicon Carbide Wafers

    Etching Process: Silicon vs. Silicon Carbide

  • Introducing Silicon Material

    Silicon is the second most abundant element on Earth after oxygen. Most silicon is found in soil, rocks, natural water, trees, and plants.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept