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    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite in China. Our MOCVD Inlet Rings have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • Tantalum Carbide Ring

    Tantalum Carbide Ring

    Semicorex Tantalum Carbide Ring is a graphite ring coated with tantalum carbide, used as a guide ring in silicon carbide crystal growth furnaces to ensure precise temperature and gas flow control. Choose Semicorex for its advanced coating technology and high-quality materials, delivering durable and reliable components that enhance crystal growth efficiency and product lifespan.*
  • Gas Distribution Plates

    Gas Distribution Plates

    Semicorex Gas Distribution Plates, made of CVD SiC is a critical component in plasma etching systems, designed to ensure uniform gas dispersion and consistent plasma performance across the wafer. Semicorex is the trusted choice for high-performance ceramic solutions, offering unmatched material purity, engineering precision, and dependable support tailored to the demands of advanced semiconductor manufacturing.*
  • SiC Cantilever Paddles

    SiC Cantilever Paddles

    Semicorex SiC Cantilever Paddles are high-performance silicon carbide cantilever paddles used in semiconductor thermal processing equipment, designed for stable wafer handling in high-temperature environments. Choosing Semicorex means choosing high-purity materials, excellent thermal stability and industry-leading precision manufacturing technology to ensure that every critical process of yours is stable and reliable.*
  • SiC Vertical Boats

    SiC Vertical Boats

    Semicorex SiC Vertical Boats are high-performance wafer carrier engineered for use in vertical furnace processes, offering exceptional stability, cleanliness, and durability. Choose Semicorex for uncompromising quality, precision manufacturing, and proven reliability in semiconductor thermal processing.*
  • SICOI Wafer

    SICOI Wafer

    SICOI wafer, a silicon carbide-insulator composite wafer made by a special technique, is primarily utilized in photonic integrated circuits and microelectromechanical systems (MEMS). This composite structure combines the excellent properties of silicon carbide with the isolation characteristics of insulators, significantly enhancing the overall performance of semiconductor devices and providing ideal solutions for high-performance electronic and optoelectronic devices.
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    C/C composite is a carbon-carbon composite material made of carbon fibers as reinforcement and carbon as matrix through processing and carbonization, with excellent mechanical and high-temperature resistance properties. The material was initially used in aerospace and special fields, and with the maturity of the technology, it has been gradually used in photovoltaic, automotive, lithium battery, medical devices and other fields.

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  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

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