SiC coated graphite tray

As the primary component of epitaxial equipment, the SiC coated graphite tray, directly affects the production efficiency, uniformity, and defect rate of the epitaxial layer growth.    

Through graphite purification, precision processing and cleaning treatment, the surface of the graphite substrate can achieve excellent flatness and smoothness, successfully avoiding the risk of particle contamination. Through chemical vapor deposition, the surface of the graphite substrate undergoes a chemical reaction with the reactive gas, generating a dense, pore-free and uniformly thick silicon carbide (SiC) coating. From substrate preparation to coating treatment, the entire production process is carried out in a Class 100 cleanroom, which satisfies cleanliness standards suitable for semiconductors.

SiC coated graphite tray which is made of the high-purity low-impurity graphite and SiC materials, has excellent thermal conductivity and low coefficient of thermal expansion. It not only enables the SiC-coated graphite tray to transfer heat swiftly and uniformly to improve the growth quality of the epitaxial layer, but also effectively reduces the risk of coating shedding or cracking due to thermal stress. In addition, the uniform and dense SiC coating is resistant to high temperatures, oxidation and corrosion, ensuring stable operation for a long time under high-temperature and corrosive gas conditions.

SiC coated graphite tray has higher compatibility with metal-organic chemical vapor deposition (MOCVD) equipment. It has been meticulously sized and designed to adapt to different process parameters and equipment requirements. Semicorex always insists on offering professional tailored services to our valued customers to precisely meet their requirements for different sizes, coating thicknesses and surface roughness of the SiC coated graphite tray.