Wafer Carrier Tray
  • Wafer Carrier TrayWafer Carrier Tray
  • Wafer Carrier TrayWafer Carrier Tray

Wafer Carrier Tray

Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components focusing on silicon carbide layers in semiconductor industries. We have been manufacturer and supplier of Wafer Carrier Tray for many years. Our Wafer Carrier Tray has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

Not only for thin film deposition phases such as epitaxy or MOCVD, or wafer handling processing, Semicorex supplies ultra-pure ceramic carrier used to support wafers. At the core of the process, the Wafer Carrier Tray for the MOCVD, are first subjected to the deposition environment, so it has high heat and corrosion resistance. The SiC coated carrier also has a high thermal conductivity, and excellent heat distribution properties.
Contact us today to learn more about our Wafer Carrier Tray.


Parameters of Wafer Carrier Tray

Technical Properties

Index

Unit

Value

Material Name

Reaction Sintered Silicon Carbide

Pressureless Sintered Silicon Carbide

Recrystallized Silicon Carbide

Composition

RBSiC

SSiC

R-SiC

Bulk Density

g/cm3

3

3.15 ± 0.03

2.60-2.70

Flexural Strength

MPa (kpsi)

338(49)

380(55)

80-90 (20°C) 90-100(1400°C)

Compressive Strength

MPa (kpsi)

1120(158)

3970(560)

> 600

Hardness

Knoop

2700

2800

/

Breaking Tenacity

MPa m1/2

4.5

4

/

Thermal Conductivity

W/m.k

95

120

23

Coefficient of Thermal Expansion

10-6.1/°C

5

4

4.7

Specific Heat

Joule/g 0k

0.8

0.67

/

Max temperature in air

1200

1500

1600

Elastic Modulus

Gpa

360

410

240


The difference between SSiC and RBSiC:

1. Sintering process is different. RBSiC is to infiltrate free Si into silicon carbide at a low temperature, SSiC is formed by natural shrinkage at 2100 degrees.

2. SSiC have smoother surface, higher density and higher strength, for some sealings with more strict surface requirements, SSiC will be better.

3. Different used time under different PH and temperature, SSiC is longer than RBSiC


Features of Wafer Carrier Tray

- CVD Silicon Carbide coatings to improve service life.
- Thermal insulation made of high-performance purified rigid carbon.
- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.
- High-purity graphite and SiC coating for pinhole resistance and higher lifetime


Available shapes of silicon carbide ceramics:

● Ceramic rod / ceramic pin / ceramic plunger

● Ceramic tube / ceramic bushing / ceramic sleeve

● Ceramic ring / ceramic washer / ceramic spacer

● Ceramic disc

● Ceramic plate / ceramic block

● Ceramic ball

● Ceramic piston

● Ceramic nozzle

● Ceramic crucible

● Other custom ceramic parts



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