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China Epitaxy Susceptor Manufacturers, Suppliers, Factory

We rely upon strategic thinking, constant modernisation in all segments, technological advances and of course upon our employees that directly participate inside our success for Epitaxy Susceptor,Silicon Carbide,Epitaxial Growth,Silicon Wafer Manufacturing Companies,Single Crystalline Silicon, By more than 8 years of company, now we have accumulated rich experience and advanced technologies from the generation of our merchandise.
Epitaxy Susceptor, Our main objectives are to provide our customers worldwide with good quality, competitive price, satisfied delivery and excellent services. Customer satisfaction is our main goal. We welcome you to visit our showroom and office. We're looking forward to establish business relation with you.

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    Semicorex's ICP Plasma Etching Tray is engineered specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers provide even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • Quartz Bell Jar

    Quartz Bell Jar

    Semicorex Quartz Bell Jar stands as a crucial component within the semiconductor industry, embodying both functionality and precision. Crafted from high-purity quartz, this bell-shaped enclosure serves as a vessel for various processes critical to semiconductor manufacturing, notably epitaxial growth and chemical vapor deposition (CVD). Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • TaC Coating Half-moon

    TaC Coating Half-moon

    Semicorex TaC Coating Half-moon is a specialized component crafted from tantalum carbide (TaC) coated graphite, designed for use in epitaxial processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Multi Pocket Susceptor

    SiC Multi Pocket Susceptor

    Semicorex SiC Multi Pocket Susceptor represents a critical enabling technology in the epitaxial growth of high-quality semiconductor wafers. Fabricated through a sophisticated Chemical Vapor Deposition (CVD) process, these susceptors provide a robust and high-performance platform for achieving exceptional epitaxial layer uniformity and process efficiency.**
  • Quartz Chamber

    Quartz Chamber

    Semicorex Quartz Chamber is an indispensable asset in the etching processes of semiconductor manufacturing and other high-tech industries. With its unique features and broad application range, it delivers superior performance and reliability. By choosing Semicorex’s Quartz Chamber, you are ensuring the highest quality etching results, backed by our unwavering commitment to innovation and customer support. Elevate your etching processes today with our advanced Quartz Chamber technology.*
  • TaC Coated Components in Epitaxial Growth

    TaC Coated Components in Epitaxial Growth

    Semicorex TaC Coated Components in Epitaxial Growth is a precious machined part located in the air intake in the epitaxial process in semiconductor. Semicorex is a top-notch company that specializes in CVD TaC coating technology in China, and exports products worldwide.*
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  • China remained the largest semiconductor equipment market

    Worldwide sales of semiconductor manufacturing equipment increased 5 percent from $102.6 billion in 2021 to an all-time record of $107.6 billion last year, SEMI, the industry association representing the global electronics design and manufacturing supply chain.

  • Taiwan's PSMC to Build 300mm Wafer Fab in Japan

    Taiwan's Power Semiconductor Manufacturing Corporation (PSMC) has announced plans to build a 300mm wafer fab in Japan in collaboration with SBI Holdings. The purpose of this collaboration is to strengthen Japan's domestic IC (integrated circuit) supply chain, with a particular focus on circuits for AI edge computing and packaging technologies.

  • Gallium Nitride Epitaxial Wafers: An Introduction to the Fabrication Process

    Gallium Nitride (GaN) epitaxial wafer growth is a complex process, often utilizing a two-step method. This method involves several critical stages, including high-temperature baking, buffer layer growth, recrystallization, and annealing. By meticulously controlling the temperature throughout these stages, the two-step growth method effectively prevents wafer warping caused by lattice mismatch or stress, making it the predominant fabrication method for GaN epitaxial wafers globally.

  • SiC Cutting

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    Homoepitaxy and heteroepitaxy play pivotal roles in material science. Homoepitaxy involves the growth of a crystalline layer on a substrate of the same material, ensuring minimal defects due to perfect lattice matching. In contrast, heteroepitaxy grows a crystalline layer on a different material substrate, which can lead to challenges like lattice mismatch. These processes are crucial in advancing semiconductor devices and thin films. For instance, heteroepitaxy significantly impacts microelectronics and quantum optics, contributing to innovations like Light Emitting Diodes.

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