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We rely upon strategic thinking, constant modernisation in all segments, technological advances and of course upon our employees that directly participate inside our success for Epitaxy Susceptor,Silicon Carbide,Epitaxial Growth,Silicon Wafer Manufacturing Companies,Single Crystalline Silicon, By more than 8 years of company, now we have accumulated rich experience and advanced technologies from the generation of our merchandise.
Epitaxy Susceptor, Our main objectives are to provide our customers worldwide with good quality, competitive price, satisfied delivery and excellent services. Customer satisfaction is our main goal. We welcome you to visit our showroom and office. We're looking forward to establish business relation with you.

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    The unique attributes of Semicorex 30mm Aluminum Nitride Wafer Substrate make it an ideal substrate for ultraviolet (UV) LEDs, UV detectors, UV lasers, and the next generation of 5G high-power/high-frequency RF devices. In wireless communications, 30mm Aluminum Nitride Wafer Substrate’s properties facilitate the development of devices capable of handling the high power and frequencies essential for 5G technologies, enhancing signal transmission and reception. Furthermore, in fields like healthcare and military, AlN-based devices are employed in medical phototherapy for treating skin conditions, drug discovery through photodynamic therapies, and secure communication technologies in aerospace, underscoring 30mm Aluminum Nitride Wafer Substrate’s versatility and critical role in technological advancements across diverse sectors.
  • Graphite Thermal Field

    Graphite Thermal Field

    Semicorex Graphite Thermal Field combines cutting-edge material science with a deep understanding of crystal growth processes, it delivers innovative a solution that empowers the semiconductor industry to achieve new levels of performance, efficiency, and cost-effectiveness.**
  • Wafer Cassettes

    Wafer Cassettes

    Semicorex PFA Wafer Cassettes are high-performance component used to safely hold and transport wafers during semiconductor processing. Choose Semicorex for its industry-leading quality, ensuring superior wafer protection, contamination control, and compatibility with automated systems.*
  • Guide Ring

    Guide Ring

    Semicorex Guide Ring with CVD tantalum carbide coating is a highly reliable and advanced component for SiC single crystal growth furnaces. Its superior material properties, durability, and precision-engineered design make it an essential part of the crystal growth process. By choosing our high-quality Guide Ring, manufacturers can achieve enhanced process stability, higher yield rates, and superior SiC crystal quality.*
  • Graphite Top Plates

    Graphite Top Plates

    Semicorex Graphite Top Plates are precision-engineered fixtures designed for secure and reliable handling of hot glass bottles in high-temperature manufacturing environments. Choose Semicorex for unmatched material quality, custom machining capabilities, and consistent performance trusted by leading glass producers worldwide.*
  • Bronze Graphite Bushing

    Bronze Graphite Bushing

    Semicorex bronze graphite bushing has the characteristics of high-load capacity, impact resistance, high-temperature resistance, strong self-lubrication ability, and can also withstand the erosion and scouring of corrosive liquids. This bronze graphite bushing is particularly suitable for equipment operating under complex working conditions where oil-free, high-temperature, high-load, low-speed, anti-fouling, anti-corrosion, and anti-radiation environment.
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  • Reviews

  • What are epitaxial wafers used for?

    Epitaxial wafers have been used in the electronics industry for decades, but their importance has only increased as technology has advanced. In this article, we will explore what epitaxial wafers are and why they are such an essential component of modern electronics.

  • What is SiC coated graphite susceptor?

    In order to introduce the SiC coated graphite susceptor, it's important to understand its application. When manufacturing devices, further epitaxial layers are required to be built on some wafer substrates.

  • Plasma Processes in CVD Operations

    Chemical Vapor Deposition (CVD) refers to a process technology where multiple gaseous reactants at varied partial pressures undergo a chemical reaction under specific temperature and pressure conditions. The resulting solid substance deposits on the surface of the substrate material, thereby obtaining the desired thin film. In traditional integrated circuit manufacturing processes, the obtained thin film materials are generally compounds such as oxides, nitrides, carbides, or materials like polycrystalline silicon, amorphous silicon, etc.

  • Why Doesn’t Gllium Nitride (GaN) Epitaxy Grow on a GaN substrate?

    The growth of GaN epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries.

  • SiC Coated Susceptors in MOCVD Processes

    CVD SiC coated susceptors function as specialized wafer holders in Metal-Organic Chemical Vapor Deposition (MOCVD) processes, playing a crucial role in semiconductor fabrication. These components are vital for maintaining the structural integrity of wafers during epitaxy under extreme conditions, such as high temperatures and corrosive environments. **

  • Semiconductor doping process

    One of the unique properties of semiconductor materials is that their conductivity, as well as their conductivity type (N-type or P-type), can be created and controlled through a process called doping. This involves introducing specialized impurities, known as dopants, into the material to form junctions on the surface of the wafer. The industry employs two main doping techniques: thermal diffusion and ion implantation.

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