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    Semicorex SiC Coated Waferholder is a high-performance component designed for the precise placement and handling of SiC wafers during epitaxy processes. Choose Semicorex for its commitment to delivering advanced, reliable materials that enhance the efficiency and quality of semiconductor manufacturing.*
  • SiC Epi-Wafer Susceptor

    SiC Epi-Wafer Susceptor

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our SiC Epi-Wafer Susceptor has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • SiC Seal Ring

    SiC Seal Ring

    Semicorex provide high-quality SiC seal ring with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • 850V High Power GaN-on-Si Epi Wafer

    850V High Power GaN-on-Si Epi Wafer

    Semicorex provides 850V High Power GaN-on-Si Epi Wafer. Compared to other substrates for HMET power devices, 850V High Power GaN-on-Si Epi Wafer enables larger sizes and more diversified applications, and can be quickly introduced into the mainstream fabs' silicon-based chip. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Coating Pancake Susceptor

    SiC Coating Pancake Susceptor

    Semicorex SiC Coating Pancake Susceptor is a high-performance component designed for use in MOCVD systems, ensuring optimal heat distribution and enhanced durability during epitaxial layer growth. Choose Semicorex for its precision-engineered products that deliver superior quality, reliability, and extended service life, tailored to meet the unique demands of semiconductor manufacturing.*
  • C/SiC Brakes

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  • Silicon Carbide(SiC) Crystal Growth Furnace

    Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

  • What is a semiconductor?

    Semiconductors are materials that guide electrical properties between conductors and insulators, with equal probability of loss and gain of electrons in the outermost layer of the atomic nucleus, and are easily made into PN junctions. Such as "silicon (Si)", "germanium (Ge)" and other materials.

  • What is cantilever paddles?

    The wafer boats, loaded with a batch of wafers to be processed, are positioned on long cantilevered paddles.

  • Silicon Carbide Wafer Epitaxy Technology

    Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high.

  • LPE is the important method for preparing P-type 4H-SiC single crystal and 3C-SiC single crystal

    As a third-generation wide bandgap semiconductor material, SiC (silicon carbide) has excellent physical and electrical properties, which makes it have broad application prospects in the field of power semiconductor devices.

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