China 100mm silicon wafer Manufacturers, Suppliers, Factory

Silicon carbide (SiC), as a wide bandgap semiconductor material, offers unparalleled advantages in high-power, high-temperature, and high-frequency applications.

Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.

Silicon material is a solid material with certain semiconductor electrical properties and physical stability, and provides substrate support for the subsequent integrated circuit manufacturing process. It is a key material for silicon-based integrated circuits. More than 95% of semiconductor devices and more than 90% of integrated circuits in the world are made on silicon wafers.

Silicon carbide (SiC) ceramic materials possess a range of excellent properties, including high-temperature strength, strong oxidation resistance, superior wear resistance, thermal stability, low thermal expansion coefficient, high thermal conductivity, high hardness, thermal shock resistance, and chemical corrosion resistance. These characteristics make SiC ceramics increasingly applicable in various fields such as automotive, mechanical and chemical industries, environmental protection, space technology, information electronics, and energy. SiC ceramics have become an irreplaceable structural ceramic material in many industrial sectors due to their outstanding performance.

SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

Currently, silicon carbide dominates the third generation of semiconductors. In the cost structure of silicon carbide devices, substrates account for 47%, and epitaxy contributes 23%. Together, these two components represent about 70% of the overall manufacturing cost, making them crucial in the silicon carbide device production chain.