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China Ceramic SiC Manufacturers, Suppliers, Factory

"Sincerity, Innovation, Rigorousness, and Efficiency" is the persistent conception of our company for the long-term to develop together with customers for mutual reciprocity and mutual benefit for Ceramic SiC,Porous SiC,Porous ceramic,Silicon carbide ceramic,microporous ceramic, In a word, when you choose us, you choose a ideal existence. Welcome to visit our factory and welcome your get! For even further inquiries, remember to usually do not hesitate to make contact with us.
Ceramic SiC, Our company now has many department, and there have more than 20 employees in our company. We set up sales shop, show room, and product warehouse. In the meantime, we registered our own brand. We have tightened inspection for quality of product.

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    If you're looking for a high-performance graphite susceptor for use in semiconductor manufacturing applications, the Semicorex SiC Coated Graphite Barrel Susceptor is the ideal choice. Its exceptional thermal conductivity and heat distribution properties make it the go-to choice for reliable and consistent performance in high-temperature and corrosive environments.
  • Semiconductor Wafer Carrier for MOCVD Equipment

    Semiconductor Wafer Carrier for MOCVD Equipment

    You can rest assured to buy Semiconductor Wafer Carrier for MOCVD Equipment from our factory. Semiconductor wafer carriers are an essential component of MOCVD equipment. They are used to transport and protect semiconductor wafers during the manufacturing process. Semiconductor Wafer Carriers for MOCVD Equipment are made of high-purity materials and are designed to maintain the integrity of the wafers during processing.
  • Wafer Boat Carrier

    Wafer Boat Carrier

    Semicorex Wafer Boat Carrier stands as a pinnacle of innovation in the realm of semiconductor processing. Crafted meticulously from graphite and fortified with a cutting-edge coating of Chemical Vapor Deposition (CVD) Silicon Carbide (SiC), this carrier exemplifies precision engineering and advanced materials science. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Carbon Ceramic Brake Pads

    Carbon Ceramic Brake Pads

    Semicorex Carbon ceramic brake pads provide exceptional strength, heat resistance, and reliable braking performance in all conditions, making them the ideal choice for high-performance vehicles, motorsports, aviation, and motorcycles. *
  • Silicon Carbide Chucks

    Silicon Carbide Chucks

    Semicorex silicon carbide chucks are specially designed for photolithography equipment and have multiple advantages such as high precision, ultra-light weight, high stiffness, low coefficient of thermal expansion, and excellent wear resistance.
  • SiC Wear-resistant Bushing

    SiC Wear-resistant Bushing

    Semicorex SiC Wear-resistant Bushing is a high-strength silicon carbide ceramic sleeve engineered for extreme durability, high-temperature stability, and long-term wear resistance in demanding industrial systems. Choosing Semicorex ensures superior material purity, precise custom machining, and consistently reliable ceramic components backed by deep expertise in advanced SiC engineering.*
  • Related Blog
  • Reviews

  • Why choose liquid phase epitaxy method?

    Compared with the PVT method, the liquid phase method for growing SiC has the following advantages:

  • Silicon Carbide(SiC) Crystal Growth Furnace

    Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

  • Core Material for SiC Growth: Tantalum Carbide Coating

    The current third-generation semiconductors are primarily based on Silicon Carbide, with substrates accounting for 47% of device costs, and epitaxy accounting for 23%, totaling approximately 70% and forming the most crucial part of the SiC device manufacturing industry.

  • Final polishing of the silicon wafer surface

    To achieve the high-quality requirements of IC chip circuit processes with line widths smaller than 0.13μm to 28nm for 300mm diameter silicon polishing wafers, it is essential to minimize contamination from impurities, such as metal ions, on the wafer's surface.

  • Exploring the Future Prospects of Silicon Semiconductor Chips

  • Application of GaN

    There are many types of gallium nitride (GaN), with silicon-based GaN being the most discussed. This technology involves growing GaN materials directly on a silicon substrate.

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