English
Home > Products > Ceramic SiC

China Ceramic SiC Manufacturers, Suppliers, Factory

"Sincerity, Innovation, Rigorousness, and Efficiency" is the persistent conception of our company for the long-term to develop together with customers for mutual reciprocity and mutual benefit for Ceramic SiC,Porous SiC,Porous ceramic,Silicon carbide ceramic,microporous ceramic, In a word, when you choose us, you choose a ideal existence. Welcome to visit our factory and welcome your get! For even further inquiries, remember to usually do not hesitate to make contact with us.
Ceramic SiC, Our company now has many department, and there have more than 20 employees in our company. We set up sales shop, show room, and product warehouse. In the meantime, we registered our own brand. We have tightened inspection for quality of product.

Related Products

Hot Products

  • CVD SiC Coated Barrel Susceptor

    CVD SiC Coated Barrel Susceptor

    Semicorex CVD SiC Coated Barrel Susceptor is a meticulously engineered component tailored for advanced semiconductor manufacturing processes, particularly epitaxy. Our products have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • GaN Epitaxy Carrier

    GaN Epitaxy Carrier

    The Semicorex GaN Epitaxy Carrier is pivotal in semiconductor manufacturing, integrating advanced materials and precision engineering. Distinguished by its CVD SiC coating, this carrier offers exceptional durability, thermal efficiency, and protective capabilities, establishing itself as a standout in the industry. We at Semicorex are dedicated to manufacturing and supplying high-performance GaN Epitaxy Carrier that fuse quality with cost-efficiency.
  • Tantalum Carbide Coated Porous Graphite

    Tantalum Carbide Coated Porous Graphite

    Semicorex Tantalum Carbide Coated Porous Graphite is the latest innovation in Silicon Carbide (SiC) crystal growth technology. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • SiC ICP Etching Disk

    SiC ICP Etching Disk

    Semicorex SiC ICP Etching Disk is not merely components; it's essential enabler of cutting-edge semiconductor manufacturing as the semiconductor industry continues its relentless pursuit of miniaturization and performance, the demand for advanced materials like SiC will only intensify. It ensures the precision, reliability, and performance required to power our technology-driven world.We at Semicorex are dedicated to manufacturing and supplying high-performance SiC ICP Etching Disk that fuses quality with cost-efficiency.**
  • SiC Coated Graphite Trays

    SiC Coated Graphite Trays

    Semicorex SiC Coated Graphite Trays are high-performance carrier solutions specifically designed for AlGaN epitaxial growth in the UV LED industry. Choose Semicorex for industry-leading material purity, precision engineering, and unmatched reliability in demanding MOCVD environments.*
  • SiC Carrier for ICP

    SiC Carrier for ICP

    Semicorex SiC Carrier for ICP is a high-performance wafer holder made of SiC-coated graphite, designed specifically for use in inductively coupled plasma (ICP) etching and deposition systems. Choose Semicorex for our world-leading anisotropic graphite quality, precision small-batch manufacturing, and uncompromising commitment to purity, consistency, and process performance.*
  • Related Blog
  • Reviews

  • Can you grind silicon carbide?

    Silicon carbide (SiC) has important applications in areas such as power electronics, high-frequency RF devices, and sensors for high-temperature-resistant environments due to its excellent physicochemical properties. However, the slicing operation during SiC wafer processing introduces damages on the surface, which, if left untreated, can expand during the subsequent epitaxial growth process and form epitaxial defects, thus affecting the yield of the device.

  • How to do CMP Process

    In the process of silicon wafer manufacturing, after the crystal rod is cut into silicon wafers, it will need to be polished and cleaned to obtain a single crystal silicon wafer like a mirror.

  • Defect-Free Epitaxial Growth and Misfit Dislocations

    Defect-free epitaxial growth occurs when one crystal lattice has nearly identical lattice constants to another. Growth happens when lattice sites of the two lattices at the interface region are approximately matched, which is possible with a small lattice mismatch (less than 0.1%). This approximate matching is achieved even with elastic strain at the interface, where each atom is slightly displaced from its original position in the boundary layer. While a small amount of strain is tolerable for thin layers and even desirable for quantum well lasers, the strain energy stored in the crystal is generally lowered by the formation of misfit dislocations, which involve a missing row of atoms in one lattice.

  • Specialized Preparation Techniques for Silicon Carbide Ceramics

    Silicon carbide (SiC) ceramic materials possess a range of excellent properties, including high-temperature strength, strong oxidation resistance, superior wear resistance, thermal stability, low thermal expansion coefficient, high thermal conductivity, high hardness, thermal shock resistance, and chemical corrosion resistance. These characteristics make SiC ceramics increasingly applicable in various fields such as automotive, mechanical and chemical industries, environmental protection, space technology, information electronics, and energy. SiC ceramics have become an irreplaceable structural ceramic material in many industrial sectors due to their outstanding performance.

  • Why Is There Increasing Demand for High-Thermal Conductivity SiC Ceramics in the Semiconductor Industry?

    Currently, silicon carbide (SiC) is a highly active area of research in thermal conductive ceramic materials both domestically and internationally.

  • PECVD Process

    Plasma Enhanced Chemical Vapor Deposition (PECVD) is a widely used technology in chip manufacturing. It utilizes the kinetic energy of electrons within plasma to activate chemical reactions in the gas phase, thereby achieving thin-film deposition.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept