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SiC Plate, We focus on providing service for our clients as a key element in strengthening our long-term relationships. Our continual availability of high grade solutions in combination with our excellent pre-sale and after-sales service ensures strong competitiveness in an increasingly globalized market. We have been willing to cooperate with business friends from at home and abroad and create a great future together.

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  • SiC-Coated Barrel Susceptor

    SiC-Coated Barrel Susceptor

    With its high melting point, oxidation resistance, and corrosion resistance, the Semicorex SiC-Coated Barrel Susceptor is the perfect choice for use in single crystal growth applications. Its silicon carbide coating provides exceptional flatness and heat distribution properties, ensuring reliable and consistent performance in even the most demanding high-temperature environments.
  • High-Temperature SiC-Coated Barrel Susceptor

    High-Temperature SiC-Coated Barrel Susceptor

    When it comes to semiconductor manufacturing, the Semicorex High-Temperature SiC-Coated Barrel Susceptor is the top choice for superior performance and reliability. Its high-quality SiC coating and exceptional thermal conductivity make it ideal for use in even the most demanding high-temperature and corrosive environments.
  • TaC Coating Graphite Cover

    TaC Coating Graphite Cover

    Semicorex TaC Coating Graphite Cover represents a cutting-edge solution in the realm of thermal applications for crystal growth and epitaxial (epi) processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Ceramic Heat Transfer Plates

    SiC Ceramic Heat Transfer Plates

    Semicorex SiC Ceramic Heat Transfer Plates, based on SiC as the primary material, undergo high-temperature sintering at 2250°C, resulting in a highly vitrified, zero-porosity dense ceramic body with an SiC content of ≥99.3%. Exhibiting a bending strength of ≥410MPa and a thermal conductivity of 140W/m.k, these ceramics are the only materials capable of withstanding corrosion from strong acids such as hydrofluoric acid (HF) and sulfuric acid (H2SO4) in the semiconductor industry. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Ceramic Heat Transfer Plates that fuse quality with cost-efficiency. **
  • C/C Composite Crucible

    C/C Composite Crucible

    Semicorex C/C Composite Crucible from Semicorex is a high-performance crucible engineered for crystal growth, offering exceptional thermal stability, durability, and chemical resistance. Choosing Semicorex ensures you receive a reliable, precision-manufactured product tailored to meet the rigorous demands of high-temperature crystal growth applications.*
  • TaC Plate

    TaC Plate

    Semicorex TaC Plate is a high-performance, TaC-coated graphite component designed for use in SiC epitaxy growth processes. Choose Semicorex for its expertise in manufacturing reliable, high-quality materials that optimize the performance and longevity of your semiconductor production equipment.*
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  • Photovoltaic Industry Development Overview

    By 2027, solar photovoltaic (PV) will overtake coal as the world's largest installed capacity. The cumulative installed capacity of solar PV nearly triples in our forecast, growing by nearly 1,500 gigawatts over this period, and will surpass natural gas by 2026 and coal by 2027.

  • Purification Technology of Graphite in SiC semiconductor

    Graphite is vital in producing Silicon Carbide (SiC) semiconductors, known for their exceptional thermal and electrical properties. This makes SiC ideal for high-power, high-temperature, and high-frequency applications. In SiC semiconductor manufacturing, graphite is commonly used for crucibles, heaters, and other high-temperature processing components due to its excellent thermal conductivity, chemical stability, and resistance to thermal shock.

  • Technical Challenges in Silicon Carbide Crystal Growth Furnaces

    Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

  • GaN vs SiC

    There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

  • Gallium Nitride Epitaxial Wafers: An Introduction to the Fabrication Process

    Gallium Nitride (GaN) epitaxial wafer growth is a complex process, often utilizing a two-step method. This method involves several critical stages, including high-temperature baking, buffer layer growth, recrystallization, and annealing. By meticulously controlling the temperature throughout these stages, the two-step growth method effectively prevents wafer warping caused by lattice mismatch or stress, making it the predominant fabrication method for GaN epitaxial wafers globally.

  • Tantalum carbide coatings in semiconductor industry

    The development of high-powered blue and UV LEDs has enabled the creation of full-color LED TV displays, as well as white LED automotive and domestic lighting. These LEDs are based on Gallium Nitride, which is deposited on substrate wafers supported by CVD SiC-coated graphite susceptor using the MOCVD process.

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