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semiconductor manufacturing, We hope we can establish long-term cooperation with all of the customers, and hope we can improve competitiveness and achieve the win-win situation together with the customers. We sincerely welcome the customers from all over the world to contact us for anything you need to have!Welcome all customers both at home and abroad to visit our factory. We hope to have win-win business relationships with you, and create a better tomorrow.

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    Ceramic Bushing

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated components in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our Ceramic Bushing has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • Graphite Ring

    Graphite Ring

    Semicorex Graphite Ring's ability to withstand extreme conditions and ease of installation make them an indispensable component in industries such as hydraulics, pneumatics, and heat exchangers.
  • SiC ALD Susceptor

    SiC ALD Susceptor

    Semicorex SiC ALD Susceptor offers numerous advantages in ALD processes, including high-temperature stability, enhanced film uniformity and quality, improved process efficiency, and extended susceptor lifetime. These benefits make the SiC ALD Susceptor a valuable tool for achieving high-performance thin films in various demanding applications.**
  • Silicon Nitride Guide Roller

    Silicon Nitride Guide Roller

    Silicon Nitride Guide Roller by Semicorex represents a pinnacle in advanced ceramic engineering. This product offers a remarkable blend of mechanical, thermal, and electrical properties.**
  • SiC Diffusion Furnace Tube

    SiC Diffusion Furnace Tube

    The advanced material properties of Semicorex SiC Diffusion Furnace Tube, including high flexural strength, outstanding oxidation and corrosion resistance, high wear resistance, low friction coefficient, superior high-temperature mechanical properties, and ultra-high purity, make it indispensable in the semiconductor industry, particularly for diffusion furnace applications. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Diffusion Furnace Tube that fuse quality with cost-efficiency.**
  • Inductively Heated Barrel Epi System

    Inductively Heated Barrel Epi System

    If you need a graphite susceptor with exceptional thermal conductivity and heat distribution properties, look no further than the Semicorex Inductively Heated Barrel Epi System. Its high-purity SiC coating provides superior protection in high-temperature and corrosive environments, making it the ideal choice for use in semiconductor manufacturing applications.
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  • What is isostatic graphite?

    Specialty graphite is graphite with carbon mass fraction greater than 99.99%, also known as "three high graphite" (high strength, high density, high purity). It is characterized by high strength, high density, high purity, high chemical stability, high thermal and electrical conductivity, high temperature resistance, radiation resistance, strong lubrication and easy processing. Isostatic graphite belongs to specialty graphite.

  • Conductive Coated Graphite Heaters

    The conductive coated graphite heater is a new product designed for high temperature semiconductor processing and other vacuum thermal systems.

  • TaC coated crucible in SiC crystal growth

    TaC coated crucibles have become an important technical solution as reaction vessels in the growth process of silicon carbide (SiC) crystals.

  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

  • Doping Technology of FZ Silicon

    Silicon is a semiconductor material. In the absence of impurities, its own electrical conductivity is very weak. Impurities and crystal defects within the crystal are the main factors affecting its electrical properties.

  • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

    Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

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