English
Home > Products > Vertical Graphite Susceptor 6 Inch

China Vertical Graphite Susceptor 6 Inch Manufacturers, Suppliers, Factory

Our firm has been concentrating on brand strategy. Customers' pleasure is our best advertising. We also supply OEM company for Vertical Graphite Susceptor 6 Inch,Semiconductor Manufacturing,Silicon Carbide Ceramic,Silicon Carbide Plate,Single Crystal Wafer, Our company is working through the procedure principle of "integrity-based, cooperation created, people oriented, win-win cooperation". We hope we can have a pleasant relationship with businessman from all around the earth.
Vertical Graphite Susceptor 6 Inch, Now we have sufficient experience in producing solutions according to samples or drawings. We warmly welcome customers from home and abroad to visit our company, and to cooperate with us for a splendid future together.

Related Products

Hot Products

  • EPI 3 1/4

    EPI 3 1/4" Barrel Susceptor

    Semicorex SiC coating EPI 3 1/4" Barrel Susceptor provides excellent thermal stability and resistance to chemical attack, while the graphite substrate offers superior heat transfer properties.
  • Etching Carrier Holder for PSS Etching

    Etching Carrier Holder for PSS Etching

    Semicorex's Etching Carrier Holder for PSS Etching is engineered for the most demanding epitaxy equipment applications. Our ultra-pure graphite carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The SiC coated carrier has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
  • ICP Plasma Etching Plate

    ICP Plasma Etching Plate

    Semicorex's ICP Plasma Etching Plate provides superior heat and corrosion resistance for wafer handling and thin film deposition processes. Our product is engineered to withstand high temperatures and harsh chemical cleaning, ensuring durability and longevity. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • SiC Susceptor for MOCVD

    SiC Susceptor for MOCVD

    Semicorex is a leading manufacturer and supplier of SiC Susceptor for MOCVD. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
  • TaC Coated Porous Graphite

    TaC Coated Porous Graphite

    Semicorex TaC Coated Porous graphite, is an advanced high-purity material on semiconductor processing. This crucial piece of equipment plays a pivotal role in the process of single crystal SiC growth. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Lid

    SiC Lid

    Semicorex SiC Lid is a high-purity silicon carbide component engineered for extreme semiconductor processing environments. Choosing Semicorex means ensuring unmatched material quality, precision engineering, and custom solutions trusted by leading semiconductor manufacturers worldwide.*
  • Related Blog
  • Reviews

  • What is the diffusion furnace?

    A diffusion furnace is a specialized piece of equipment used to introduce impurities into semiconductor wafers in a controlled manner. These impurities, called dopants, change the electrical properties of semiconductors, allowing different types of electronic components to be made. This controlled diffusion process is critical to the production of transistors, diodes and integrated circuits.

  • 3 methods of graphite molding

    The four main molding methods for graphite molding are: extrusion molding, molding, vibratory molding and isostatic molding. Most of the common carbon/graphite materials on the market are molded by hot extrusion and molding (cold or hot), and isostatic molding is a method with leading molding performance. Vibration molding is generally used to manufacture medium and coarse structural graphite, particle size between 0.5-2mm particle size, generally dominated by di-roasted graphitized products, density between 1.55-1.75kg/m³, coarser particles, rougher surface, can not be used for precision machining. It is mainly used in chemical industry and metal smelting.

  • Main steps in SiC substrate processing

    The processing of 4H-SiC substrate mainly includes the following steps:

  • Thin film growth process

    Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.

  • Technical Challenges in Silicon Carbide Crystal Growth Furnaces

    Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

  • Research Progress of TaC Coatings on Carbon-Based Material Surfaces

    Carbon-based materials such as graphite, carbon fibers, and carbon/carbon (C/C) composites are known for their high specific strength, high specific modulus, and excellent thermal properties, making them suitable for a wide range of high-temperature applications. These materials are widely utilized in aerospace, chemical engineering, and energy storage. However, their susceptibility to oxidation and corrosion in high-temperature environments, along with poor scratch resistance, restricts their further application.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept