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Having a positive and progressive attitude to customer's fascination, our organization constantly improves our solution high-quality to fulfill the requirements of shoppers and further focuses on safety, reliability, environmental prerequisites, and innovation of Silicon Coating,Semiconductor Manufacturing,Silicon Carbide Ceramic,Silicon Carbide Plate,Single Crystal Wafer, Looking to the long run, a lengthy way to go, regularly striving to become the all employees with full enthusiasm, one hundred times the confidence and put our company built a beautiful environment, advanced merchandise, good quality first-class modern company and work hard!
Silicon Coating, The credibility is the priority, and the service is the vitality. We promise we now have the ability to supply excellent quality and reasonable price products and solutions for customers. With us, your safety is guaranteed.

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  • Semiconductor Quartz Ring

    Semiconductor Quartz Ring

    Semicorex Semiconductor Quartz Ring stands as an indispensable component within the intricate realm of semiconductor processing. Crafted with precision and engineered for reliability, this ring serves as a crucial interface between various stages of semiconductor fabrication, ensuring optimal performance and efficiency throughout the process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Fine Powder

    SiC Fine Powder

    Semicorex SiC Fine Powder is a high-quality, ultra-fine powder known for its exceptional purity and controlled particle size distribution. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Halfmoon Part for LPE

    Halfmoon Part for LPE

    Semicorex Halfmoon Part for LPE is a TaC-coated graphite component designed for use in LPE reactors, playing a critical role in SiC epitaxy processes. Choose Semicorex for its high-quality, durable components that ensure optimal performance and reliability in demanding semiconductor manufacturing environments.*
  • Semiconductor Wafer Boat

    Semiconductor Wafer Boat

    Semicorex provides wafer boats, pedestals, and custom wafer carriers for both vertical / column and horizontal configurations. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Semiconductor Wafer Boat has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC End Effector

    SiC End Effector

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our SiC End Effector has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Graphite Thermal Field

    Graphite Thermal Field

    Semicorex Graphite Thermal Field combines cutting-edge material science with a deep understanding of crystal growth processes, it delivers innovative a solution that empowers the semiconductor industry to achieve new levels of performance, efficiency, and cost-effectiveness.**
  • Related Blog
  • Reviews

  • What is porous graphite?

    Porous graphite, also known as porous carbon or porous graphite material, is a graphite form that has been specially engineered to have an interconnected network of pores or voids within its structure.

  • What is graphitising？

    Graphitising is the process of transforming non-graphitic charcoal into graphitic charcoal with graphite three-dimensional regular ordered structure by high-temperature heat treatment, making full use of electrical resistance heat to heat the charcoal material to 2300~3000 ℃, and transforming the charcoal with amorphous chaotic layer structure into ordered graphite crystalline structure.

  • TaC coating with CVD method

    Tantalum carbide coating is an important high-strength, corrosion-resistant and chemically stable high-temperature structural material with a melting point of up to 4273 °C, one of the several compounds with the highest temperature resistance. It has excellent high-temperature mechanical properties, resistance to high-speed airflow scouring, ablation resistance, and good chemical and mechanical compatibility with graphite and carbon/carbon composites. Therefore, in the epitaxial process of GaN LEDs and SiC power devices such as MOCVD, TaC coating has excellent acid and alkali resistance to H2, HCl, NH3, which can completely protect the graphite substrate material and purify the growth environment.

  • Silicon Epitaxial Layers and Substrates in Semiconductor Manufacturing

    In modern electronics, optoelectronics, microelectronics, and information technology fields, semiconductor substrates and epitaxial technologies are indispensable. They provide a solid foundation for manufacturing high-performance, high-reliability semiconductor devices. As technology continues to advance, semiconductor substrates and epitaxial technologies will also progress, bringing new breakthroughs and developments to the future of the semiconductor industry.

  • Advantages of Silicon Carbide Ceramics in the Optical Fiber Industry

    Silicon carbide ceramics offer numerous advantages in the optical fiber industry, including high-temperature stability, low thermal expansion coefficient, low loss and damage threshold, mechanical strength, corrosion resistance, good thermal conductivity, and low dielectric constant. These properties make SiC ceramics an ideal material for fiber optic sensors, lasers, and high-power optical fiber applications. As demand in the optical fiber field increases, the application prospects for silicon carbide ceramics will become increasingly prominent.

  • Advantages of TaC Coating in SiC Single Crystal Growth

    Currently, silicon carbide dominates the third generation of semiconductors. In the cost structure of silicon carbide devices, substrates account for 47%, and epitaxy contributes 23%. Together, these two components represent about 70% of the overall manufacturing cost, making them crucial in the silicon carbide device production chain.

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