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Having a positive and progressive attitude to customer's fascination, our organization constantly improves our solution high-quality to fulfill the requirements of shoppers and further focuses on safety, reliability, environmental prerequisites, and innovation of Silicon Coating,Semiconductor Manufacturing,Silicon Carbide Ceramic,Silicon Carbide Plate,Single Crystal Wafer, Looking to the long run, a lengthy way to go, regularly striving to become the all employees with full enthusiasm, one hundred times the confidence and put our company built a beautiful environment, advanced merchandise, good quality first-class modern company and work hard!
Silicon Coating, The credibility is the priority, and the service is the vitality. We promise we now have the ability to supply excellent quality and reasonable price products and solutions for customers. With us, your safety is guaranteed.

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  • SiC Ceramic Cantilever Paddle

    SiC Ceramic Cantilever Paddle

    Large wafer loading force silicon carbide SiC ceramic cantilever paddle is suitable for a robot automatic loading and handling system because it has stable performance, non-deformation in high temperature and large wafer loading force. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC-coated Wafer Disc

    SiC-coated Wafer Disc

    The Semicorex SiC-coated Wafer Disc represents a leading advancement in semiconductor manufacturing technology, playing an essential role in the complex process of fabricating semiconductors. Engineered with meticulous precision, this disc is crafted from superior SiC-coated graphite, delivering outstanding performance and durability for silicon epitaxy applications. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC-coated Wafer Disc that fuse quality with cost-efficiency.
  • TaC Coating Plate

    TaC Coating Plate

    Semicorex TaC Coating Plate stands out as a high-performance component for demanding epitaxial growth process and further semiconductor manufacturing environments.With its series of superior properties,it can ultimately enhance the productivity and cost-effectiveness of advanced semiconductor fabrication processes.**
  • Epitaxy Component

    Epitaxy Component

    Semicorex Epitaxy Component is a crucial element in the production of high-quality SiC substrates for advanced semiconductor applications, a reliable choice for LPE reactor systems. By selecting Semicorex Epitaxy Component, customers can be confident in their investment and enhance their production capabilities in the competitive semiconductor market.*
  • Si Substrate

    Si Substrate

    Semicorex Si Substrate is designed with precision and reliability to meet the exacting standards of semiconductor manufacturing. Choosing Semicorex means choosing a substrate that is meticulously crafted to deliver consistent performance across all applications. Our Si Substrate undergo rigorous quality control, ensuring minimal impurities and defects, and are available in custom specifications to match the needs of cutting-edge technology.*
  • Al2O3 Cutting Blade

    Al2O3 Cutting Blade

    Semicorex Al2O3 Cutting Blade,has been meticulously engineered to meet the rigorous demands of cutting processes across a spectrum of industries, including but not limited to film and foil, medical applications, and the intricate assembly of electronic components.**
  • Related Blog
  • Reviews

  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

  • Understanding the Etching Differences Between Silicon and Silicon Carbide Wafers

    Etching Process: Silicon vs. Silicon Carbide

  • Analyzing the Applications and Development Prospects of SiC Ceramics in the Semiconductor and Photovoltaic Sectors

    Silicon carbide (SiC), as an important high-end ceramic material, has excellent properties such as high-temperature resistance, corrosion resistance, wear resistance, high-temperature mechanical strength, and oxidation resistance. These properties make it highly promising for applications in high-tech fields such as semiconductors, nuclear energy, defense, and space technology.

  • Ion Implant and Diffusion Process

    Ion implantation is a method of semiconductor doping and one of the main processes in semiconductor manufacturing.

  • Advantages and Disadvantages of Gallium Nitride (GaN) Applications

    As the world looks for new opportunities in semiconductors, gallium nitride continues to stand out as a potential candidate for future power and RF applications. However, for all the benefits it offers, it still faces a major challenge; there are no P-type (P-type) products. Why is GaN touted as the next major semiconductor material, why is the lack of P-type GaN devices a major drawback, and what does this mean for future designs?

  • Czochralski method

    Wafers are sliced from crystal rods, which are produced from polycrystalline and pure undoped intrinsic materials. The process of transforming polycrystalline material into single crystals through melting and recrystallization is known as crystal growth. Currently, two main methods are employed for this process: the Czochralski method and the zone melting method. Among these, the Czochralski method (often referred to as the CZ method) is the most significant for growing single crystals from melts. In fact, over 85% of single crystal silicon is produced using the Czochralski method.

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