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  • CVD Coating Wafer Holder

    CVD Coating Wafer Holder

    Semicorex CVD Coating Wafer Holder is a high-performance component with a tantalum carbide coating, designed for precision and durability in semiconductor epitaxy processes. Choose Semicorex for reliable, advanced solutions that enhance your production efficiency and ensure superior quality in every application.*
  • TaC Coated Wafer Susceptor

    TaC Coated Wafer Susceptor

    Semicorex TaC Coated Wafer Susceptor is a crucial component used in Metal-Organic Chemical Vapor Deposition (MOCVD) furnaces for semiconductor epitaxial (epi) processing. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • RTP Ring

    RTP Ring

    Semicorex RTP Ring is a SiC-coated graphite ring designed for high-performance applications in Rapid Thermal Processing (RTP) systems. Choose Semicorex for our advanced material technology, ensuring superior durability, precision, and reliability in semiconductor manufacturing.*
  • Tantalum Carbide Chuck

    Tantalum Carbide Chuck

    Semicorex Tantalum Carbide Chuck is an advanced component used in semiconductor manufacturing equipment, renowned for its exceptional thermal and mechanical properties. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Silicon Carbide Ceramic Wafer Boat

    Silicon Carbide Ceramic Wafer Boat

    Semicorex provides wafer boats, pedestals, and custom wafer carriers for both vertical / column and horizontal configurations. We have been manufacturer and supplier of silicon carbide coating film for many years. Our silicon carbide ceramic wafer boat has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Lithography Machine Skeleton

    Lithography Machine Skeleton

    Semicorex lithography machine skeleton is an essential structural component designed to support and stabilize the intricate machinery involved in photolithography processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • Plasma Processes in CVD Operations

    Chemical Vapor Deposition (CVD) refers to a process technology where multiple gaseous reactants at varied partial pressures undergo a chemical reaction under specific temperature and pressure conditions. The resulting solid substance deposits on the surface of the substrate material, thereby obtaining the desired thin film. In traditional integrated circuit manufacturing processes, the obtained thin film materials are generally compounds such as oxides, nitrides, carbides, or materials like polycrystalline silicon, amorphous silicon, etc.

  • Analyzing the Applications and Development Prospects of SiC Ceramics in the Semiconductor and Photovoltaic Sectors

    Silicon carbide (SiC), as an important high-end ceramic material, has excellent properties such as high-temperature resistance, corrosion resistance, wear resistance, high-temperature mechanical strength, and oxidation resistance. These properties make it highly promising for applications in high-tech fields such as semiconductors, nuclear energy, defense, and space technology.

  • Introducing Silicon Material

    Silicon is the second most abundant element on Earth after oxygen. Most silicon is found in soil, rocks, natural water, trees, and plants.

  • Crystal Orientation and Defects in Silicon Wafers

    The basic crystal unit cell of monocrystalline silicon is the zinc blende structure, in which each silicon atom bonds chemically with four neighboring silicon atoms. This structure is also found in monocrystalline carbon diamonds.

  • Monocrystalline Silicon Manufacturing

    The three primary methods used in monocrystalline silicon manufacturing are the Czochralski (CZ) method, the Kyropoulos method, and the Float Zone (FZ) method.

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