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China Monocrystalline Silicon Wafer Manufacturers, Suppliers, Factory

We believe that prolonged time period partnership is really a result of top of the range, benefit added provider, prosperous knowledge and personal contact for Monocrystalline Silicon Wafer,Graphite Tray,Epitaxial Susceptor,Susceptor MOCVD,Susceptor Semiconductor, we could solve our customer problems asap and do the profit for our customer. For those who need superior provider and excellent , pls choose us , thanks !
Monocrystalline Silicon Wafer, We honor ourselves as a company that comprises of a strong team of professionals who are innovative and well experienced in the international trading, business development and product advancement. Moreover, the company stays unique among its competitors due to its superior standard of quality in production, and its efficiency and flexibility in business support.

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    Semicorex 2" Gallium Oxide Substrates represent a new chapter in the story of fourth-generation semiconductors, with an accelerating pace of mass production and commercialization. These substrates exhibit exceptional benefits for various advanced technological applications. Gallium Oxide substrates not only symbolize a significant advancement in semiconductor technology but also open up new avenues for improving device efficiency and performance across a spectrum of high-stakes industries. We at Semicorex are dedicated to manufacturing and supplying high-performance 2" Gallium Oxide Substrates that fuse quality with cost-efficiency.**
  • SiC Pipes

    SiC Pipes

    Semicorex SiC Pipes are high-performance silicon carbide ceramic components designed for semiconductor furnace applications, delivering exceptional thermal, mechanical, and chemical stability in demanding process environments. Choose Semicorex for precision-engineered SiC pipes that ensure consistent quality, extended service life, and maximum furnace efficiency.*
  • SiC Vacuum Chuck

    SiC Vacuum Chuck

    Semicorex SiC Vacuum Chuck represents a pinnacle of precision engineering tailored for the demanding semiconductor industry. Crafted from graphite substrates and enhanced through state-of-the-art Chemical Vapor Deposition (CVD) techniques, this innovative device seamlessly integrates the unparalleled properties of Silicon Carbide (SiC) coating. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Coated PSS Etching Carrier

    SiC Coated PSS Etching Carrier

    Wafer carriers used in epixial growth and wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex SiC Coated PSS Etching Carrier engineered specifically for these demanding epitaxy equipment applications. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • MOCVD Cover Star Disc Plate for Wafer Epitaxy

    MOCVD Cover Star Disc Plate for Wafer Epitaxy

    Semicorex is a renowned manufacturer and supplier of high-quality MOCVD Cover Star Disc Plate for Wafer Epitaxy. Our product is specially designed to cater to the needs of the semiconductor industry, particularly in growing the epitaxial layer on the wafer chip. Our susceptor is used as the center plate in MOCVD, with a gear or ring-shaped design. The product is highly resistant to high heat and corrosion, making it ideal for use in extreme environments.
  • Wafer Boats

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  • Applications of Silicon Carbide

    Among the core components of electric vehicles, automotive power modules—primarily utilizing IGBT technology—play a crucial role. These modules not only determine the key performance of the electric drive system but also account for over 40% of the cost of the motor inverter.

  • What is graphitising？

    Graphitising is the process of transforming non-graphitic charcoal into graphitic charcoal with graphite three-dimensional regular ordered structure by high-temperature heat treatment, making full use of electrical resistance heat to heat the charcoal material to 2300~3000 ℃, and transforming the charcoal with amorphous chaotic layer structure into ordered graphite crystalline structure.

  • MOCVD is the key equipment

  • What is the process of SiC epitaxial?

    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

  • What is Diffusion Process

    Doping involves introducing a dose of impurities into semiconductor materials to alter their electrical properties. Diffusion and ion implantation are two methods of doping. Early impurity doping was primarily accomplished through high-temperature diffusion.

  • Substrate Cutting and Grinding Process

    SiC substrate material is the core of SiC chip. The production process of the substrate is: after obtaining the SiC crystal ingot through single crystal growth; then preparing the SiC substrate requires smoothing, rounding, cutting, grinding (thinning); mechanical polishing, chemical mechanical polishing; and cleaning, testing, etc. Process

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