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    Semicorex provide high-quality SiC seal ring with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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    SiC Wafer Chuck

    Semicorex SiC Wafer Chuck stands as a pinnacle of innovation in semiconductor manufacturing, serving as a crucial component in the intricate process of semiconductor fabrication. Crafted with meticulous precision and cutting-edge technology, this chuck plays an indispensable role in supporting and stabilizing silicon carbide (SiC) wafers during various stages of production. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Graphite Soft Felt

    Graphite Soft Felt

    Semicorex Graphite Soft Felt is a high-performance insulation material designed to maintain optimal temperature conditions in semiconductor crystal growth processes. Semicorex offers advanced solutions with superior thermal management, ensuring high-quality materials and reliable performance in critical semiconductor manufacturing applications.*
  • 8 inch EPI Bottom Ring

    8 inch EPI Bottom Ring

    Semicorex 8 inch EPI Bottom Ring is a robust SiC coated graphite component essential for epitaxial wafer processing. Choose Semicorex for unmatched material purity, coating precision, and reliable performance in every production cycle.*
  • SiC Fin

    SiC Fin

    Semicorex SiC Fin is a high-purity silicon carbide ceramic component precisely engineered with a perforated disk structure for efficient gas and liquid flow management in epitaxy and etching equipment. Semicorex delivers customized, high-precision components that ensure superior durability, chemical resistance, and performance stability in semiconductor process environments.*
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  • What is epitaxial wafer process?

    Epitaxial wafer process is a critical technique used in semiconductor manufacturing. It involves the growth of a thin layer of crystal material on top of a substrate, which has the same crystal structure and orientation as the substrate. This process creates a high-quality interface between the two materials, allowing for the development of advanced electronic devices.

  • What is a TaC coating on graphite?

    In the rapidly evolving field of semiconductor manufacturing, even the smallest improvements can make a big difference when it comes to achieving optimal performance, durability, and efficiency. One advancement that is generating a lot of buzz in the industry is the use of TaC (Tantalum Carbide) coating on graphite surfaces. But what exactly is TaC coating, and why are semiconductor manufacturers taking notice of it?

  • Research Progress of TaC Coatings on Carbon-Based Material Surfaces

    Carbon-based materials such as graphite, carbon fibers, and carbon/carbon (C/C) composites are known for their high specific strength, high specific modulus, and excellent thermal properties, making them suitable for a wide range of high-temperature applications. These materials are widely utilized in aerospace, chemical engineering, and energy storage. However, their susceptibility to oxidation and corrosion in high-temperature environments, along with poor scratch resistance, restricts their further application.

  • What is Low Temperature Plasma Etching?

    Plasma is the fourth state of matter, and it plays a crucial role in both industrial applications and natural phenomena.

  • Nearly $840 Million: Onsemi Acquires a SiC Company

    Today, Onsemi announced on its official website that it has reached an agreement with Qorvo to acquire the SiC JFET technology business and Qorvo's subsidiary.

  • What are the technical difficulties of SiC crystal growth furnace

    The crystal growth furnace is the core equipment for the growth of Silicon Carbide crystals. It is similar to the traditional crystalline silicon-grade crystal growth furnace. The furnace structure is not very complicated. It is mainly composed of the furnace body, heating system, coil transmission mechanism, vacuum acquisition and measurement system, gas path system, cooling system, control system, etc. The thermal field and process conditions determine the key indicators such as the quality, size, and conductivity of the SiC crystal.

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