English
Home > Products > handling arm

China handling arm Manufacturers, Suppliers, Factory

Our primary objective is usually to offer our shoppers a serious and responsible small business relationship, offering personalized attention to all of them for handling arm,Alumina,TEL,Ceramic Arm,vacuum end effector, Leading the trend of this field is our persistent objective. Supplying 1st class products and solutions is our intention. To make a beautiful long term, we would want to cooperate with all friends at your house and abroad. Should you've any interest within our products, remember to usually do not be reluctant to get in touch with us.
handling arm, We have been introduced as a one of the growing manufacture supplier and export of our solutions. We have now a team of dedicated trained specialist who take care the quality and timely supply. If you are looking for Good Quality at a good price and timely delivery. Do contact us.

Related Products

Hot Products

  • RTP Graphite Carrier Plate

    RTP Graphite Carrier Plate

    Semicorex's RTP Graphite Carrier Plate is the perfect solution for semiconductor wafer processing applications, including epitaxial growth and wafer handling processing. Our product is designed to offer superior heat resistance and thermal uniformity, ensuring that the epitaxy susceptors are subjected to the deposition environment, with high heat and corrosion resistance.
  • MOCVD Satellite Holder Plate

    MOCVD Satellite Holder Plate

    Semicorex MOCVD Satellite Holder Plate is an outstanding carrier designed for use in the semiconductor industry. Its high purity, excellent corrosion resistance, and even thermal profile make it an excellent choice for those looking for a carrier that can withstand the demands of the semiconductor manufacturing process. We are committed to providing our customers with high-quality products that meet their specific requirements. Contact us today to learn more about our MOCVD Satellite Holder Plate and how we can help you with your semiconductor manufacturing needs.
  • MOCVD Planet Susceptor for Semiconductor

    MOCVD Planet Susceptor for Semiconductor

    Semicorex is a trusted name in the semiconductor industry, providing high-quality MOCVD Planet Susceptor for Semiconductor. Our product is designed to meet the specific needs of semiconductor manufacturers looking for a carrier that can deliver excellent performance, stability, and durability. Contact us today to learn more about our product and how we can help you with your semiconductor manufacturing needs.
  • SiC-coated Wafer Disc

    SiC-coated Wafer Disc

    The Semicorex SiC-coated Wafer Disc represents a leading advancement in semiconductor manufacturing technology, playing an essential role in the complex process of fabricating semiconductors. Engineered with meticulous precision, this disc is crafted from superior SiC-coated graphite, delivering outstanding performance and durability for silicon epitaxy applications. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC-coated Wafer Disc that fuse quality with cost-efficiency.
  • Porous Graphite with TaC Coating

    Porous Graphite with TaC Coating

    Semicorex Porous Graphite with TaC Coating is a specialized material designed to address critical challenges in the growth of Silicon Carbide (SiC) crystals. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • SiC-Coated Epitaxial Susceptors

    SiC-Coated Epitaxial Susceptors

    Semicorex SiC-coated epitaxial susceptors are the essential components used in the semiconductor epitaxial growth process to stably support and fix the semiconductor wafers. Leveraging mature manufacturing capabilities and state-of-the-art production technologies, Semicorex is committed to supplying market-leading quality and competitively priced SiC-coated epitaxial susceptors for our valued customers.
  • Related Blog
  • Reviews

  • Application Scenarios for Epitaxial Layers

    We know that further epitaxial layers need to be built on top of some wafer substrates for device fabrication, typically LED light-emitting devices, which require GaAs epitaxial layers on top of silicon substrates; SiC epitaxial layers are grown on top of conductive SiC substrates for building devices such as SBDs, MOSFETs, etc. for high voltage, high current and other power applications; GaN epitaxial layers are built on top of semi-insulating SiC substrates for building HEMTs and other RF applications.

  • The first 6-inch Gallium Oxide substrate industrialization company

    Recently, our company announced that the company has successfully developed a 6-inch Gallium Oxide single crystal using the casting method, becoming the first domestic industrialized company to master the 6-inch Gallium Oxide single crystal substrate preparation technology.

  • Substrate vs. Epitaxy: Key Roles in Semiconductor Manufacturing

    ​In the realms of semiconductor technology and microelectronics, the concepts of substrates and epitaxy hold significant importance. They play critical roles in the manufacturing process of semiconductor devices. This article will delve into the differences between semiconductor substrates and epitaxy, covering their definitions, functions, material structures, and application areas.

  • Silicon Wafer

    Silicon material is a solid material with certain semiconductor electrical properties and physical stability, and provides substrate support for the subsequent integrated circuit manufacturing process. It is a key material for silicon-based integrated circuits. More than 95% of semiconductor devices and more than 90% of integrated circuits in the world are made on silicon wafers.

  • Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

    Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

  • Detailed Explanation of Semiconductor CVD SiC Process Technology(Part.Ⅱ)

    In the chemical vapor deposition (CVD) process, the gases used mainly include reactant gases and carrier gases. Reactant gases provide atoms or molecules for the deposited material, while carrier gases are used to dilute and control the reaction environment. Below are some commonly used CVD gases:

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept