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    Semicorex SiC ICP plate is an advanced semiconductor component specifically engineered to meet the rigorous demands of modern semiconductor manufacturing processes. This high-performance product is designed with the latest silicon carbide (SiC) material technology, offering unparalleled durability, efficiency, and reliability, making it an essential component in the fabrication of cutting-edge semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
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    Semicorex Porous Alumina Chucks are microporous black alumina vacuum fixture with 35–40% porosity, designed to provide uniform suction and safe wafer handling in semiconductor manufacturing. Choosing Semicorex means reliable ceramic engineering, superior material quality, and consistent performance that safeguard yield and process stability.*
  • TaC Coating Jig

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    Semicorex TaC Coating Jig stands as a pivotal component within the semiconductor manufacturing process, crafted meticulously from graphite and fortified with a resilient layer of tantalum carbide coating. This crucial equipment element embodies a fusion of cutting-edge materials science and precision engineering, designed to uphold stringent operational demands and exacting standards prevalent in semiconductor fabrication. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite in China. We provide heaters, support crucibles, heat shields and insulating components for single crystal growing processes and materials. We focus on semiconductor industries, our Silicon Wafer Heater has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
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    Oxidation process refers to the process of providing oxidants (such as oxygen, water vapor) and thermal energy onsilicon wafers, causing a chemical reaction between silicon and the oxidants to form a protective silicon dioxide (SiO₂) film.

  • TaC coating with CVD method

    Tantalum carbide coating is an important high-strength, corrosion-resistant and chemically stable high-temperature structural material with a melting point of up to 4273 °C, one of the several compounds with the highest temperature resistance. It has excellent high-temperature mechanical properties, resistance to high-speed airflow scouring, ablation resistance, and good chemical and mechanical compatibility with graphite and carbon/carbon composites. Therefore, in the epitaxial process of GaN LEDs and SiC power devices such as MOCVD, TaC coating has excellent acid and alkali resistance to H2, HCl, NH3, which can completely protect the graphite substrate material and purify the growth environment.

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